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TPN2R805PL,L1Q
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TPN2R805PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR
零件號
TPN2R805PL,L1Q
製造商/品牌
Toshiba Semiconductor and Storage
系列
U-MOSIX-H
零件狀態
Active
包裝
-
科技
MOSFET (Metal Oxide)
工作溫度
175°C
安裝類型
Surface Mount
包裝/箱
8-PowerVDFN
供應商設備包
8-TSON Advance (3.3x3.3)
功耗（最大）
2.67W (Ta), 104W (Tc)
場效管類型
N-Channel
場效電晶體特性
-
漏源電壓 (Vdss)
45V
電流 - 連續汲極 (Id) @ 25°C
139A (Ta), 80A (Tc)
Rds On（最大）@Id、Vgs
2.8 mOhm @ 40A, 10V
Vgs(th)（最大值）@Id
2.4V @ 300µA
閘極電荷 (Qg)（最大值）@Vgs
39nC @ 10V
輸入電容 (Ciss)（最大值）@Vds
3.2nF @ 22.5V
驅動電壓（最大導通電阻、最小導通電阻）
4.5V, 10V
Vgs（最大）
±20V
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有存貨 51771 PCS
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