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TPN2010FNH,L1Q
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TPN2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8TSON
零件號
TPN2010FNH,L1Q
製造商/品牌
Toshiba Semiconductor and Storage
系列
U-MOSVIII-H
零件狀態
Active
包裝
Tape & Reel (TR)
科技
MOSFET (Metal Oxide)
工作溫度
150°C (TJ)
安裝類型
Surface Mount
包裝/箱
8-PowerVDFN
供應商設備包
8-TSON Advance (3.3x3.3)
功耗（最大）
700mW (Ta), 39W (Tc)
場效管類型
N-Channel
場效電晶體特性
-
漏源電壓 (Vdss)
250V
電流 - 連續汲極 (Id) @ 25°C
5.6A (Ta)
Rds On（最大）@Id、Vgs
198 mOhm @ 2.8A, 10V
Vgs(th)（最大值）@Id
4V @ 200µA
閘極電荷 (Qg)（最大值）@Vgs
7nC @ 10V
輸入電容 (Ciss)（最大值）@Vds
600pF @ 100V
驅動電壓（最大導通電阻、最小導通電阻）
10V
Vgs（最大）
±20V
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有存貨 42553 PCS
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