購買 Toshiba Semiconductor and Storage TPN11006NL,LQ MOSFET N-CH 60V 17A 8TSON - YYIC

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TPN11006NL,LQ

數據表

TPN11006NL,LQ

MOSFET N-CH 60V 17A 8TSON

零件號

TPN11006NL,LQ

製造商/品牌

Toshiba Semiconductor and Storage

系列

U-MOSVIII-H

零件狀態

Active

包裝

Digi-Reel®

科技

MOSFET (Metal Oxide)

工作溫度

150°C (TJ)

安裝類型

Surface Mount

包裝/箱

8-PowerVDFN

供應商設備包

8-TSON Advance (3.3x3.3)

功耗（最大）

700mW (Ta), 30W (Tc)

場效管類型

N-Channel

場效電晶體特性

-

漏源電壓 (Vdss)

60V

電流 - 連續汲極 (Id) @ 25°C

17A (Tc)

Rds On（最大）@Id、Vgs

11.4 mOhm @ 8.5A, 10V

Vgs(th)（最大值）@Id

2.5V @ 200µA

閘極電荷 (Qg)（最大值）@Vgs

23nC @ 10V

輸入電容 (Ciss)（最大值）@Vds

2000pF @ 30V

驅動電壓（最大導通電阻、最小導通電阻）

4.5V, 10V

Vgs（最大）

±20V

請求報價

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