onsemi (Ansemi)
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NCD57000DWR2G Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.

NCD57000DWR2G

Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.
零件號
NCD57000DWR2G
類別
Power Chip > Gate Driver IC
製造商/品牌
onsemi (Ansemi)
封裝
SOIC-16-300mil
包裝
taping
包裹數
1000
描述
The NCD57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCD57000 can accommodate 5V and 3.3V signals on the input side, and a wide range of bias voltages on the driver side, including negative voltage capability. The NCD57000 provides > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCD57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.
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有存貨 69307 PCS
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關鍵字:NCD57000DWR2G
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