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IPI16CNE8N G
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IPI16CNE8N G

MOSFET N-CH 85V 53A TO262-3
零件號
IPI16CNE8N G
製造商/品牌
Infineon Technologies
系列
OptiMOS™
零件狀態
Obsolete
包裝
Tube
科技
MOSFET (Metal Oxide)
工作溫度
-55°C ~ 175°C (TJ)
安裝類型
Through Hole
包裝/箱
TO-262-3 Long Leads, I²Pak, TO-262AA
供應商設備包
PG-TO262-3
功耗（最大）
100W (Tc)
場效管類型
N-Channel
場效電晶體特性
-
漏源電壓 (Vdss)
85V
電流 - 連續汲極 (Id) @ 25°C
53A (Tc)
Rds On（最大）@Id、Vgs
16.5 mOhm @ 53A, 10V
Vgs(th)（最大值）@Id
4V @ 61µA
閘極電荷 (Qg)（最大值）@Vgs
48nC @ 10V
輸入電容 (Ciss)（最大值）@Vds
3230pF @ 40V
驅動電壓（最大導通電阻、最小導通電阻）
10V
Vgs（最大）
±20V
請求報價
請填寫所有必填字段，然後點擊提交，我們將在12小時內透過電子郵件與您聯繫。如果您有任何問題，請留言或發送電子郵件至[email protected]，我們會盡快回覆。
有存貨 48156 PCS
聯絡資訊
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