onsemi (Ansemi)
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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
零件號
NCP5106BDR2G
類別
Power Chip > Gate Driver IC
製造商/品牌
onsemi (Ansemi)
封裝
SOIC-8-150mil
包裝
taping
包裹數
2500
描述
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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有存貨 75348 PCS
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關鍵字:NCP5106BDR2G
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