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PHE13003C,412

PHE13003C,412 Product Overview

Introduction

The PHE13003C,412 is a semiconductor product belonging to the category of power transistors. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Power Transistor
  • Use: Amplification and switching of electrical signals in power applications
  • Characteristics: High voltage capability, high current handling capacity, low saturation voltage
  • Package: TO-220AB
  • Essence: Silicon NPN Epitaxial Planar Transistor
  • Packaging/Quantity: Typically packaged individually

Specifications

  • Voltage Rating: 700V
  • Current Rating: 12A
  • Power Dissipation: 80W
  • Gain-Bandwidth Product: 3 MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The PHE13003C,412 transistor has a standard TO-220AB package with three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability suitable for power applications
  • Low saturation voltage leading to efficient power management
  • Fast switching speed for improved performance

Advantages and Disadvantages

Advantages

  • High voltage and current ratings
  • Low saturation voltage
  • Fast switching speed

Disadvantages

  • Relatively limited gain-bandwidth product
  • Operating temperature range may not be suitable for extreme environments

Working Principles

The PHE13003C,412 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter terminals through the base terminal.

Detailed Application Field Plans

The PHE13003C,412 is commonly used in various power applications including: - Switching power supplies - Electronic ballasts - Motor control circuits - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the PHE13003C,412 include: - PHE13005C,412 - PHE13007C,412 - PHE13009C,412

In conclusion, the PHE13003C,412 power transistor offers high voltage capability, low saturation voltage, and fast switching speed, making it suitable for a range of power applications. However, its relatively limited gain-bandwidth product and operating temperature range should be considered when selecting it for specific designs.

This entry provides a comprehensive overview of the PHE13003C,412, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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10個與PHE13003C,412在技術方案中應用相關的常見問題與解答

  1. What is the application of PHE13003C,412 in technical solutions?

    • PHE13003C,412 is commonly used as a high-voltage switching transistor in various technical solutions such as power supplies and electronic circuits.
  2. What are the key specifications of PHE13003C,412?

    • PHE13003C,412 typically has a collector-emitter voltage (Vce) of 700V, a collector current (Ic) of 4A, and a maximum power dissipation (Pd) of 40W.
  3. How can PHE13003C,412 be utilized in power supply designs?

    • PHE13003C,412 can be employed in power supply designs to control and switch high voltages and currents, making it suitable for applications like SMPS (Switched-Mode Power Supplies).
  4. What are the recommended operating conditions for PHE13003C,412?

    • The recommended operating conditions for PHE13003C,412 include a maximum collector current (Ic) of 4A, a collector-emitter voltage (Vce) of 700V, and an operating temperature range of -55°C to 150°C.
  5. Can PHE13003C,412 be used in audio amplifier circuits?

    • While PHE13003C,412 is primarily designed for high-voltage switching applications, it may not be the most suitable choice for low-voltage audio amplifier circuits.
  6. What are the typical applications where PHE13003C,412 is not recommended?

    • PHE13003C,412 is not recommended for low-power, low-voltage applications or those requiring precise amplification due to its high-voltage switching nature.
  7. Are there any specific considerations for driving PHE13003C,412 in technical solutions?

    • When driving PHE13003C,412, it's important to ensure proper heat sinking and thermal management due to its relatively high power dissipation.
  8. Can PHE13003C,412 be used in automotive electronics?

    • PHE13003C,412 can be utilized in certain automotive electronic systems that require high-voltage switching capabilities, but it's essential to adhere to automotive-grade specifications and standards.
  9. What are the common failure modes associated with PHE13003C,412 in technical solutions?

    • Common failure modes for PHE13003C,412 may include overvoltage stress, overcurrent conditions, and thermal overstress, which can lead to breakdown or degradation of the device.
  10. Are there any alternative components that can be used in place of PHE13003C,412 for similar technical solutions?

    • Depending on the specific requirements, alternative high-voltage switching transistors such as PHE13005C or PHE13009C may be considered as substitutes for PHE13003C,412 in technical solutions.