SUD23N06-31-GE3

Introduction

The SUD23N06-31-GE3 is a power MOSFET belonging to the category of electronic components. It is widely used in various electronic devices and systems due to its unique characteristics and performance. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SUD23N06-31-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SUD23N06-31-GE3 is used as a switching device in electronic circuits, particularly in power supply and motor control applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The SUD23N06-31-GE3 is typically available in a TO-252 package, providing thermal and electrical isolation.
• Essence: Its essence lies in providing efficient and reliable switching capabilities in electronic circuits.
• Packaging/Quantity: It is commonly packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

The SUD23N06-31-GE3 has the following key specifications: - Drain-Source Voltage (VDS): 60V - Continuous Drain Current (ID): 23A - On-State Resistance (RDS(ON)): 31mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 18nC

Detailed Pin Configuration

The pin configuration of the SUD23N06-31-GE3 is as follows: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)

Functional Features

The SUD23N06-31-GE3 offers the following functional features: - High current-carrying capability - Low on-state resistance for reduced power dissipation - Fast switching speed for improved efficiency - Enhanced thermal performance due to the package design

Advantages and Disadvantages

Advantages: - High efficiency in power conversion applications - Reliable switching performance - Compact package design for space-constrained applications

Disadvantages: - Sensitivity to static electricity and voltage spikes - Limited maximum voltage and current ratings compared to higher-power devices

Working Principles

The SUD23N06-31-GE3 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can switch between its on and off states, enabling efficient power control in electronic circuits.

Detailed Application Field Plans

The SUD23N06-31-GE3 finds extensive use in the following application fields: - Switch-mode power supplies - Motor drive circuits - DC-DC converters - Inverter systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SUD23N06-31-GE3 include: - IRF3709ZPBF - FDP7030BL - AUIRF3710S

In conclusion, the SUD23N06-31-GE3 power MOSFET offers high-performance switching capabilities and is well-suited for various electronic applications requiring efficient power control. Its specifications, pin configuration, functional features, and application field plans make it a valuable component in modern electronic designs.

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