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SQD50N05-11L_GE3
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SQD50N05-11L_GE3

Product Overview

Category

The SQD50N05-11L_GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply, motor control, and other high-current switching applications.

Characteristics

  • High current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power required

Package

The SQD50N05-11L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 50A
  • RDS(ON) (Max) @ VGS = 10V: 11mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The SQD50N05-11L_GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-state resistance for minimal power dissipation
  • High current handling capability for robust performance
  • Fast switching speed for efficient operation

Advantages

  • Efficient power management
  • Suitable for high-current applications
  • Fast response time

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The SQD50N05-11L_GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Power supplies - Motor control circuits - Inverters - Switching regulators

Detailed and Complete Alternative Models

  • IRF540N
  • FDP8870
  • STP55NF06L

In conclusion, the SQD50N05-11L_GE3 power MOSFET offers high current handling, low on-state resistance, and fast switching speed, making it an essential component in various power management and control applications.

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10個與SQD50N05-11L_GE3在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage of SQD50N05-11L_GE3?

    • The maximum drain-source voltage of SQD50N05-11L_GE3 is 55V.

  2. What is the continuous drain current rating of SQD50N05-11L_GE3?

    • The continuous drain current rating of SQD50N05-11L_GE3 is 50A.

  3. What is the on-resistance (RDS(on)) of SQD50N05-11L_GE3?

    • The on-resistance (RDS(on)) of SQD50N05-11L_GE3 is typically 11mΩ at VGS = 10V.

  4. What is the gate threshold voltage of SQD50N05-11L_GE3?

    • The gate threshold voltage of SQD50N05-11L_GE3 is typically 2.5V.

  5. Is SQD50N05-11L_GE3 suitable for high-frequency switching applications?

    • Yes, SQD50N05-11L_GE3 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.

  6. What is the operating temperature range of SQD50N05-11L_GE3?

    • The operating temperature range of SQD50N05-11L_GE3 is -55°C to 175°C.

  7. Can SQD50N05-11L_GE3 be used in automotive applications?

    • Yes, SQD50N05-11L_GE3 is AEC-Q101 qualified and suitable for automotive applications.

  8. Does SQD50N05-11L_GE3 have built-in ESD protection?

    • No, SQD50N05-11L_GE3 does not have built-in ESD protection and should be handled with ESD precautions.

  9. What is the package type of SQD50N05-11L_GE3?

    • SQD50N05-11L_GE3 is available in a DPAK (TO-252) package.

  10. Is SQD50N05-11L_GE3 RoHS compliant?

    • Yes, SQD50N05-11L_GE3 is RoHS compliant, making it suitable for environmentally friendly designs.