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SIR460DP-T1-GE3

SIR460DP-T1-GE3

Product Overview

Category

The SIR460DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIR460DP-T1-GE3 is typically available in a DPAK (TO-252) package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 15A
  • RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 28nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIR460DP-T1-GE3 features a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for improved efficiency
  • High current handling capability for robust performance

Advantages

  • High efficiency and low power dissipation
  • Suitable for high-frequency switching applications
  • Robust construction for reliable operation in demanding environments

Disadvantages

  • May require careful consideration of heat dissipation in high-power applications
  • Higher cost compared to traditional bipolar transistors

Working Principles

The SIR460DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIR460DP-T1-GE3 is well-suited for use in: - Switching power supplies - Motor control systems - LED lighting applications - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SIR460DP-T1-GE3 include: - IRF540N - FDP8870 - AOD4184

In conclusion, the SIR460DP-T1-GE3 power MOSFET offers high efficiency, fast switching, and robust performance, making it an ideal choice for various power management applications.

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10個與SIR460DP-T1-GE3在技術方案中應用相關的常見問題與解答

  1. What is the maximum operating temperature of SIR460DP-T1-GE3?

    • The maximum operating temperature of SIR460DP-T1-GE3 is typically 150°C.
  2. What is the typical forward voltage drop of SIR460DP-T1-GE3?

    • The typical forward voltage drop of SIR460DP-T1-GE3 is around 0.75V at a forward current of 10A.
  3. What is the reverse recovery time of SIR460DP-T1-GE3?

    • The reverse recovery time of SIR460DP-T1-GE3 is typically 19ns.
  4. What are the recommended applications for SIR460DP-T1-GE3?

    • SIR460DP-T1-GE3 is commonly used in synchronous rectification, DC-DC converters, and motor control applications.
  5. What is the maximum continuous drain current of SIR460DP-T1-GE3?

    • The maximum continuous drain current of SIR460DP-T1-GE3 is 40A.
  6. Does SIR460DP-T1-GE3 have an integrated Schottky diode?

    • No, SIR460DP-T1-GE3 does not have an integrated Schottky diode.
  7. What is the gate threshold voltage of SIR460DP-T1-GE3?

    • The gate threshold voltage of SIR460DP-T1-GE3 is typically 2.35V.
  8. Is SIR460DP-T1-GE3 suitable for high-frequency switching applications?

    • Yes, SIR460DP-T1-GE3 is suitable for high-frequency switching due to its fast switching characteristics.
  9. What is the typical on-state resistance of SIR460DP-T1-GE3?

    • The typical on-state resistance of SIR460DP-T1-GE3 is 4.6mΩ.
  10. Does SIR460DP-T1-GE3 require a heatsink for operation?

    • It is recommended to use a heatsink for SIR460DP-T1-GE3 when operating at high currents or in elevated temperature environments to ensure optimal thermal performance.