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SIHP180N60E-GE3
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SIHP180N60E-GE3

Product Overview

Category: Power Semiconductor
Use: High-power applications
Characteristics: High efficiency, low switching losses
Package: TO-220AB
Essence: Silicon Carbide (SiC) MOSFET
Packaging/Quantity: 50 pieces per tube

Specifications

  • Voltage Rating: 600V
  • Current Rating: 180A
  • RDS(on): 60mΩ
  • Gate Threshold Voltage: 4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Ultra-low on-resistance
  • Fast switching speed
  • High temperature operation capability
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages: - Reduced power losses - Improved system efficiency - Higher power density - Enhanced reliability

Disadvantages: - Higher cost compared to traditional silicon-based devices - Sensitivity to overvoltage conditions

Working Principles

The SIHP180N60E-GE3 utilizes silicon carbide technology to achieve lower conduction and switching losses compared to traditional silicon-based power devices. This is achieved through the superior material properties of SiC, enabling higher efficiency and improved thermal performance.

Detailed Application Field Plans

  1. Electric vehicle (EV) powertrain systems
  2. Renewable energy inverters
  3. Industrial motor drives
  4. Power supplies for data centers
  5. High-power converters for grid-tied applications

Detailed and Complete Alternative Models

  1. C3M0075120K (Cree/Wolfspeed)
  2. SCT2H12NZGC11 (Rohm Semiconductor)
  3. APTMC120AM20CTG (Microchip Technology)
  4. SCS220AGC (ON Semiconductor)

This comprehensive entry provides a detailed overview of the SIHP180N60E-GE3, covering its specifications, features, advantages, and application fields, as well as alternative models for comparison.

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10個與SIHP180N60E-GE3在技術方案中應用相關的常見問題與解答

  1. What is the maximum voltage rating of SIHP180N60E-GE3?

    • The maximum voltage rating of SIHP180N60E-GE3 is 600V.

  2. What is the maximum continuous drain current of SIHP180N60E-GE3?

    • The maximum continuous drain current of SIHP180N60E-GE3 is 180A.

  3. What is the on-resistance of SIHP180N60E-GE3?

    • The on-resistance of SIHP180N60E-GE3 is typically 0.042 ohms.

  4. What is the gate threshold voltage of SIHP180N60E-GE3?

    • The gate threshold voltage of SIHP180N60E-GE3 is typically 4V.

  5. What are the typical applications for SIHP180N60E-GE3?

    • SIHP180N60E-GE3 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the operating temperature range of SIHP180N60E-GE3?

    • The operating temperature range of SIHP180N60E-GE3 is -55°C to 150°C.

  7. Does SIHP180N60E-GE3 require a heat sink for operation?

    • Yes, SIHP180N60E-GE3 may require a heat sink for optimal thermal management, especially in high-power applications.

  8. Is SIHP180N60E-GE3 suitable for automotive applications?

    • Yes, SIHP180N60E-GE3 is suitable for automotive applications due to its high current and voltage ratings.

  9. What are the recommended gate driver specifications for SIHP180N60E-GE3?

    • It is recommended to use a gate driver with sufficient drive strength and voltage capability to fully enhance the MOSFET.

  10. Are there any specific layout considerations when using SIHP180N60E-GE3 in a circuit?

    • Proper PCB layout, including minimizing parasitic inductance and ensuring adequate thermal vias, is important for maximizing the performance of SIHP180N60E-GE3.