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SIHJ6N65E-T1-GE3
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SIHJ6N65E-T1-GE3

Product Overview

Category

The SIHJ6N65E-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHJ6N65E-T1-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is designed to handle high power and high voltage applications efficiently.

Packaging/Quantity

It is usually packaged in reels with a quantity specified by the manufacturer.

Specifications

  • Voltage Rating: 650V
  • Current Rating: 6A
  • On-Resistance: 1.8Ω
  • Package Type: TO-220AB

Detailed Pin Configuration

The pin configuration for the SIHJ6N65E-T1-GE3 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows it to be used in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid switching in high-frequency applications.

Advantages

  • Suitable for high-power applications
  • Efficient power handling
  • Fast switching speed

Disadvantages

  • May require additional circuitry for driving the gate due to its high voltage rating
  • Higher cost compared to lower voltage MOSFETs

Working Principles

The SIHJ6N65E-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHJ6N65E-T1-GE3 is widely used in: - Power supplies - Motor control systems - High-power inverters - Switching power converters

Detailed and Complete Alternative Models

Some alternative models to the SIHJ6N65E-T1-GE3 include: - IRF840 - STP55NF06L - FQP50N06L

In conclusion, the SIHJ6N65E-T1-GE3 is a high-voltage power MOSFET with excellent characteristics suitable for various high-power applications, although it may require careful consideration of driving circuitry and cost implications.

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10個與SIHJ6N65E-T1-GE3在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage of SIHJ6N65E-T1-GE3?

    • The maximum drain-source voltage of SIHJ6N65E-T1-GE3 is 650V.

  2. What is the continuous drain current rating of SIHJ6N65E-T1-GE3?

    • The continuous drain current rating of SIHJ6N65E-T1-GE3 is 6A.

  3. What is the on-state resistance (RDS(on)) of SIHJ6N65E-T1-GE3?

    • The on-state resistance (RDS(on)) of SIHJ6N65E-T1-GE3 is typically 0.65 ohms.

  4. What is the gate threshold voltage of SIHJ6N65E-T1-GE3?

    • The gate threshold voltage of SIHJ6N65E-T1-GE3 is typically 2.5V.

  5. What are the typical applications for SIHJ6N65E-T1-GE3?

    • SIHJ6N65E-T1-GE3 is commonly used in power supplies, motor control, and lighting applications.

  6. What is the maximum junction temperature of SIHJ6N65E-T1-GE3?

    • The maximum junction temperature of SIHJ6N65E-T1-GE3 is 150°C.

  7. Does SIHJ6N65E-T1-GE3 require a heat sink for operation?

    • It is recommended to use a heat sink for SIHJ6N65E-T1-GE3 when operating at high currents or in high ambient temperatures.

  8. Is SIHJ6N65E-T1-GE3 suitable for switching applications?

    • Yes, SIHJ6N65E-T1-GE3 is suitable for high-speed switching applications.

  9. What is the input capacitance of SIHJ6N65E-T1-GE3?

    • The input capacitance of SIHJ6N65E-T1-GE3 is typically 1300pF.

  10. Can SIHJ6N65E-T1-GE3 be used in automotive applications?

    • Yes, SIHJ6N65E-T1-GE3 is suitable for automotive systems such as electric vehicle powertrains and battery management.