SI7998DP-T1-GE3

Product Overview

SI7998DP-T1-GE3 belongs to the category of power MOSFETs. It is commonly used in electronic circuits for switching and amplifying signals. The characteristics of this product include high efficiency, low on-resistance, and fast switching speed. It is typically packaged in a small outline package (SOP) and is available in quantities suitable for both prototyping and production.

Specifications

• Voltage Rating: 30V
• Current Rating: 80A
• Package Type: DPAK
• On-Resistance: 4.5mΩ
• Gate Charge: 40nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SI7998DP-T1-GE3 features a standard DPAK pin configuration with three pins: gate, drain, and source.

Functional Features

• Low On-Resistance: Enables efficient power transfer and reduces heat dissipation.
• Fast Switching Speed: Allows for rapid switching between on and off states.
• High Current Handling: Capable of handling high current loads with ease.

Advantages and Disadvantages

Advantages - High efficiency - Low on-resistance - Fast switching speed

Disadvantages - Limited voltage rating - Sensitive to overvoltage conditions

Working Principles

The SI7998DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in various applications such as: - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• SI7856DP-T1-GE3: Similar specifications with a lower current rating.
• SI8400DP-T1-GE3: Higher voltage rating with comparable on-resistance.

In conclusion, the SI7998DP-T1-GE3 power MOSFET offers high efficiency and fast switching speed, making it suitable for a wide range of applications in the electronics industry.

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