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SI7476DP-T1-GE3
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SI7476DP-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification of power in electronic circuits - Characteristics: High voltage, low on-resistance, fast switching speed - Package: DPAK (TO-252) - Essence: Efficient power management - Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 20A - On-Resistance: 4.5mΩ - Gate Charge: 18nC - Operating Temperature: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for improved efficiency - Enhanced thermal performance for reliability - Avalanche energy rated for ruggedness

Advantages: - High efficiency in power management - Reliable performance in various applications - Compact package for space-constrained designs

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The SI7476DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals.

Detailed Application Field Plans: - DC-DC converters - Motor control - Power supplies - Battery management systems - LED lighting

Detailed and Complete Alternative Models: - SI7469DP-T1-GE3 - SI7488DP-T1-GE3 - SI7455DP-T1-GE3

This comprehensive entry provides a detailed overview of the SI7476DP-T1-GE3 Power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

10個與SI7476DP-T1-GE3在技術方案中應用相關的常見問題與解答

  1. What is the SI7476DP-T1-GE3?

    • The SI7476DP-T1-GE3 is a dual P-channel MOSFET designed for use in power management applications.

  2. What are the key features of the SI7476DP-T1-GE3?

    • The key features include low on-resistance, high current capability, and a compact package design.

  3. What are the typical applications for the SI7476DP-T1-GE3?

    • Typical applications include battery protection, power switches, load switches, and other power management solutions.

  4. What is the maximum drain-source voltage rating for the SI7476DP-T1-GE3?

    • The maximum drain-source voltage rating is typically around 20V.

  5. What is the maximum continuous drain current for the SI7476DP-T1-GE3?

    • The maximum continuous drain current is typically around 6A.

  6. What is the operating temperature range for the SI7476DP-T1-GE3?

    • The operating temperature range is typically between -55°C to 150°C.

  7. Does the SI7476DP-T1-GE3 require any external components for operation?

    • It may require external components such as resistors, capacitors, and inductors depending on the specific application.

  8. Is the SI7476DP-T1-GE3 suitable for automotive applications?

    • Yes, it is often used in automotive power management systems due to its performance and reliability.

  9. Can the SI7476DP-T1-GE3 be used in high-frequency switching applications?

    • Yes, it is capable of being used in high-frequency switching applications due to its fast switching characteristics.

  10. Where can I find detailed technical specifications and application notes for the SI7476DP-T1-GE3?

    • Detailed technical specifications and application notes can be found on the manufacturer's website or in the product datasheet.