SI7409ADN-T1-GE3

Introduction

The SI7409ADN-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management and control
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

• Voltage Rating: 30V
• Current Rating: 10A
• On-Resistance: 8.5mΩ
• Package Type: DFN-8
• Operating Temperature Range: -55°C to 150°C
• Gate Charge: 12nC
• Breakdown Voltage: 30V

Detailed Pin Configuration

The SI7409ADN-T1-GE3 features a DFN-8 package with the following pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance leading to reduced power losses
• Enhanced thermal performance for reliability in various applications

Advantages and Disadvantages

Advantages - High efficiency - Compact package size - Excellent thermal performance

Disadvantages - Sensitive to overvoltage conditions - Limited maximum voltage rating

Working Principles

The SI7409ADN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the device. When a suitable gate voltage is applied, the device allows or blocks the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET finds extensive use in various applications including: - DC-DC converters - Motor control systems - Power management modules - LED lighting drivers - Battery protection circuits

Detailed and Complete Alternative Models

• SI7469DP-T1-GE3: Similar specifications with enhanced thermal performance
• SI7410DN-T1-GE3: Higher voltage rating with comparable on-resistance
• SI7392ADN-T1-GE3: Lower on-resistance for higher current handling capabilities

In conclusion, the SI7409ADN-T1-GE3 power MOSFET offers high efficiency and reliable performance in a compact package, making it an ideal choice for various electronic applications.

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