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SI2307BDS-T1-E3
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SI2307BDS-T1-E3

Product Overview

Category

The SI2307BDS-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used for switching and amplifying electronic signals in various applications.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

The SI2307BDS-T1-E3 is typically available in a small SOT-23 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 2.5A
  • On-Resistance (RDS(ON)): 75mΩ
  • Power Dissipation (PD): 1.25W
  • Gate-Source Voltage (VGS): ±8V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI2307BDS-T1-E3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Low gate drive voltage for ease of control
  • High current capability for versatile applications

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Compact package size
  • Versatile application range

Disadvantages

  • Limited maximum drain-source voltage
  • Sensitivity to static electricity

Working Principles

The SI2307BDS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI2307BDS-T1-E3 is widely used in: - Battery management systems - DC-DC converters - Motor control circuits - LED lighting applications - Portable electronic devices

Detailed and Complete Alternative Models

Some alternative models to the SI2307BDS-T1-E3 include: - SI2307BDS-T1-GE3 - SI2307BDS-T1-E3-ND - SI2307BDS-T1-E3-AY

In conclusion, the SI2307BDS-T1-E3 power MOSFET offers efficient power management and control in a compact package, making it suitable for a wide range of electronic applications.

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10個與SI2307BDS-T1-E3在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage rating of SI2307BDS-T1-E3?

    • The maximum drain-source voltage rating of SI2307BDS-T1-E3 is 20V.

  2. What is the continuous drain current rating of SI2307BDS-T1-E3?

    • The continuous drain current rating of SI2307BDS-T1-E3 is 4.3A.

  3. What is the on-resistance (RDS(on)) of SI2307BDS-T1-E3?

    • The on-resistance (RDS(on)) of SI2307BDS-T1-E3 is typically 25mΩ at VGS = 4.5V.

  4. What is the gate threshold voltage (VGS(th)) of SI2307BDS-T1-E3?

    • The gate threshold voltage (VGS(th)) of SI2307BDS-T1-E3 is typically 1.0V to 2.5V.

  5. Is SI2307BDS-T1-E3 suitable for use in battery protection circuits?

    • Yes, SI2307BDS-T1-E3 is suitable for use in battery protection circuits due to its low on-resistance and low gate threshold voltage.

  6. Can SI2307BDS-T1-E3 be used in load switching applications?

    • Yes, SI2307BDS-T1-E3 can be used in load switching applications due to its high drain-source voltage rating and low on-resistance.

  7. What is the operating temperature range of SI2307BDS-T1-E3?

    • The operating temperature range of SI2307BDS-T1-E3 is -55°C to 150°C.

  8. Does SI2307BDS-T1-E3 have built-in ESD protection?

    • Yes, SI2307BDS-T1-E3 has built-in ESD protection, making it suitable for applications where ESD robustness is required.

  9. What package type does SI2307BDS-T1-E3 come in?

    • SI2307BDS-T1-E3 comes in a compact and space-saving SOT-23 package.

  10. Is SI2307BDS-T1-E3 RoHS compliant?

    • Yes, SI2307BDS-T1-E3 is RoHS compliant, meeting environmental regulations for lead-free and hazardous substance-free materials.