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SI1022R-T1-GE3
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SI1022R-T1-GE3

Product Overview

Category

The SI1022R-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI1022R-T1-GE3 is typically available in a compact and industry-standard PowerPAK® SO-8 package.

Essence

This MOSFET is designed to provide efficient power management solutions with minimal power loss.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 9.7A
  • On-Resistance (RDS(on)): 10mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 11nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI1022R-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

  • Low power dissipation
  • Enhanced thermal performance
  • ESD protection
  • Avalanche ruggedness

Advantages and Disadvantages

Advantages

  • High efficiency and reliability
  • Compact package size
  • Suitable for high-frequency applications
  • Enhanced thermal characteristics

Disadvantages

  • Sensitive to static electricity
  • Limited voltage and current handling capabilities compared to larger packages

Working Principles

The SI1022R-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

  • SI7157DP-T1-GE3
  • SI2319DS-T1-GE3
  • SI2337DS-T1-GE3
  • SI2302CDS-T1-GE3

In conclusion, the SI1022R-T1-GE3 power MOSFET offers high efficiency and reliable performance in power management applications, making it a popular choice for various electronic designs.

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10個與SI1022R-T1-GE3在技術方案中應用相關的常見問題與解答

  1. What is the maximum voltage rating for SI1022R-T1-GE3?

    • The maximum voltage rating for SI1022R-T1-GE3 is 30V.

  2. What is the typical on-resistance of SI1022R-T1-GE3?

    • The typical on-resistance of SI1022R-T1-GE3 is 10mΩ.

  3. What is the maximum continuous drain current for SI1022R-T1-GE3?

    • The maximum continuous drain current for SI1022R-T1-GE3 is 100A.

  4. Can SI1022R-T1-GE3 be used in automotive applications?

    • Yes, SI1022R-T1-GE3 is suitable for automotive applications.

  5. What is the operating temperature range for SI1022R-T1-GE3?

    • The operating temperature range for SI1022R-T1-GE3 is -55°C to 150°C.

  6. Is SI1022R-T1-GE3 RoHS compliant?

    • Yes, SI1022R-T1-GE3 is RoHS compliant.

  7. Does SI1022R-T1-GE3 require a heat sink for proper operation?

    • It depends on the specific application and power dissipation requirements. In some cases, a heat sink may be necessary.

  8. What is the package type for SI1022R-T1-GE3?

    • SI1022R-T1-GE3 comes in a PowerPAK® SO-8 package.

  9. Can SI1022R-T1-GE3 be used in high-frequency switching applications?

    • Yes, SI1022R-T1-GE3 is suitable for high-frequency switching applications.

  10. Are there any recommended layout considerations when using SI1022R-T1-GE3 in a PCB design?

    • Yes, it is recommended to follow the layout guidelines provided in the datasheet to optimize performance and minimize parasitic effects.