STW68N60M6 - Power MOSFET

Introduction

The STW68N60M6 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Semiconductor device
• Use: Power switching applications
• Characteristics: High voltage, high current capability, low on-state resistance
• Package: TO-247
• Essence: Efficient power management
• Packaging/Quantity: Typically sold in reels or tubes

Specifications

• Voltage Rating: 600V
• Current Rating: 68A
• On-State Resistance: 0.06 ohms
• Gate Threshold Voltage: 3V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STW68N60M6 features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Low gate drive power required

Advantages

• Excellent thermal performance
• High efficiency in power switching applications
• Robust and reliable operation

Disadvantages

• Higher cost compared to traditional power transistors
• Sensitive to electrostatic discharge (ESD)

Working Principles

The STW68N60M6 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow through.

Detailed Application Field Plans

The STW68N60M6 finds extensive use in various applications, including: - Switched-mode power supplies - Motor control - Inverters - Industrial and automotive electronics

Detailed and Complete Alternative Models

1. IRFP4668PbF
2. FDPF51N25T
3. IXFK68N60Q3

In conclusion, the STW68N60M6 power MOSFET offers high-performance characteristics suitable for demanding power switching applications across diverse industries.

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