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STB35N65DM2
Product Overview
Category
The STB35N65DM2 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The STB35N65DM2 is typically available in a TO-263 package.
Essence
The essence of the STB35N65DM2 lies in its ability to efficiently handle high power and high voltage applications.
Packaging/Quantity
It is usually packaged in reels with a quantity of 250 units per reel.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 35A
- On-Resistance (RDS(on)): 0.065Ω
- Power Dissipation (PD): 280W
- Gate Threshold Voltage (VGS(th)): 2-4V
Detailed Pin Configuration
The pin configuration of the STB35N65DM2 includes the following: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power loss and heat generation.
Advantages
- Suitable for high-power applications
- Fast switching speed
- Low power dissipation
Disadvantages
- Higher cost compared to lower power MOSFETs
- Requires careful handling due to high voltage capability
Working Principles
The STB35N65DM2 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The STB35N65DM2 is well-suited for use in the following applications: - Power supplies - Motor control systems - High-power switching circuits
Detailed and Complete Alternative Models
Some alternative models to the STB35N65DM2 include: - STB30N60DM2 - STB40N60DM2 - STB25N65DM2
In conclusion, the STB35N65DM2 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it an ideal choice for various high-power applications.
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10個與STB35N65DM2在技術方案中應用相關的常見問題與解答
What is the maximum drain-source voltage rating of STB35N65DM2?
- The maximum drain-source voltage rating of STB35N65DM2 is 650V.
What is the continuous drain current rating of STB35N65DM2?
- The continuous drain current rating of STB35N65DM2 is 35A.
What is the on-state resistance (RDS(on)) of STB35N65DM2?
- The on-state resistance (RDS(on)) of STB35N65DM2 is typically 0.065 ohms.
What are the typical gate charge and total gate charge of STB35N65DM2?
- The typical gate charge of STB35N65DM2 is 45nC, and the total gate charge is 90nC.
What is the maximum junction temperature of STB35N65DM2?
- The maximum junction temperature of STB35N65DM2 is 150°C.
What are the recommended operating conditions for STB35N65DM2?
- The recommended operating conditions for STB35N65DM2 include a drain-source voltage (VDS) of up to 650V, a continuous drain current (ID) of 35A, and a maximum junction temperature (Tj) of 150°C.
What are the typical applications for STB35N65DM2?
- Typical applications for STB35N65DM2 include power supplies, motor control, and lighting systems.
Does STB35N65DM2 require a heat sink for operation?
- Depending on the application and operating conditions, STB35N65DM2 may require a heat sink for efficient thermal management.
What are the key features of STB35N65DM2 that make it suitable for technical solutions?
- Key features of STB35N65DM2 include high voltage capability, low on-state resistance, and fast switching characteristics, making it suitable for various power electronics applications.
Are there any specific considerations for driving STB35N65DM2 in a circuit?
- When driving STB35N65DM2 in a circuit, it's important to consider gate drive requirements, voltage spikes, and thermal management to ensure reliable and efficient operation.