The GP1UM28RK00F operates by emitting infrared light from the diode and detecting the reflected light with the phototransistor. When an object is within the sensor's range, the phototransistor generates a corresponding electrical signal, allowing for proximity sensing and object detection.
This comprehensive entry provides a detailed overview of the GP1UM28RK00F, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
What is GP1UM28RK00F?
What are the key features of GP1UM28RK00F?
What is the operating wavelength range of GP1UM28RK00F?
What are the typical applications of GP1UM28RK00F?
What is the maximum data rate supported by GP1UM28RK00F?
Does GP1UM28RK00F require any external components for operation?
What is the typical responsivity of GP1UM28RK00F?
Is GP1UM28RK00F sensitive to ambient light?
Can GP1UM28RK00F be used in harsh industrial environments?
Are there any specific precautions to consider when integrating GP1UM28RK00F into a technical solution?