BR24G04FV-3GTE2

Product Overview

Category

The BR24G04FV-3GTE2 belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile: The BR24G04FV-3GTE2 retains stored data even when power is removed.
• High capacity: It has a storage capacity of 4 kilobits (512 bytes).
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• High-speed operation: It offers fast read and write access times.
• Wide operating voltage range: The BR24G04FV-3GTE2 can operate within a wide voltage range, typically from 1.7V to 5.5V.

Package

The BR24G04FV-3GTE2 is available in a small surface-mount SOP-8 package.

Essence

The essence of the BR24G04FV-3GTE2 lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

The device is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory capacity: 4 kilobits (512 bytes)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Interface: I2C (2-wire serial interface)
• Write cycle endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The BR24G04FV-3GTE2 features an SOP-8 package with the following pin configuration:

1. VSS: Ground
2. SDA: Serial data input/output
3. SCL: Serial clock input
4. WP: Write protect (optional)
5. VCC: Power supply
6. NC: No connection
7. NC: No connection
8. VSS: Ground

Functional Features

• Random access: The device allows random access to any location within the memory array.
• Byte-level read and write: Data can be read from or written to individual bytes within the memory.
• Page write mode: The BR24G04FV-3GTE2 supports page write operations, allowing multiple bytes to be written in a single operation.
• Write protection: The optional write protect pin (WP) can be used to prevent accidental writes to the memory.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Compact form factor and low power consumption make it suitable for various applications.
• High-speed operation enables efficient data access.
• Wide operating voltage range provides flexibility in different systems.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per kilobit compared to larger capacity memories.

Working Principles

The BR24G04FV-3GTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges in floating gate transistors, which can be electrically programmed or erased. The stored charges represent binary data that can be read back when needed.

Detailed Application Field Plans

The BR24G04FV-3GTE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive systems - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models to the BR24G04FV-3GTE2 include: - AT24C04 (by Atmel) - CAT24C04 (by ON Semiconductor) - M24C04 (by STMicroelectronics) - 24AA04 (by Microchip Technology)

These alternative models offer similar functionality and can be used as replacements depending on specific requirements.

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