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UNR511F00L
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UNR511F00L

Product Overview

  • Belongs to: Semiconductor Devices
  • Category: Power Transistor
  • Use: Amplification and Switching Applications
  • Characteristics: High power dissipation, high current capability, low saturation voltage
  • Package: TO-220F
  • Essence: NPN Silicon Epitaxial Planar Transistor
  • Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 5A
  • Power Dissipation (PD): 1.5W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching speed
  • Complementary to UPR311F00L

Advantages

  • Suitable for high power amplification and switching applications
  • Wide operating temperature range
  • Low saturation voltage

Disadvantages

  • Relatively lower transition frequency compared to similar models
  • Limited power dissipation capability

Working Principles

The UNR511F00L operates based on the principles of bipolar junction transistors, utilizing NPN silicon epitaxial planar technology to amplify and switch electronic signals.

Detailed Application Field Plans

  1. Audio Amplification: The transistor can be used in audio amplifier circuits due to its high power dissipation and current capability.
  2. Switching Circuits: Its fast switching speed makes it suitable for use in various switching applications, such as motor control and power management.

Detailed and Complete Alternative Models

  1. UPR311F00L
  2. UNR211F00L
  3. UNR411F00L

This content provides a comprehensive overview of the UNR511F00L power transistor, including its specifications, features, advantages, and application field plans, adhering to the English editing encyclopedia entry structure format.

10個與UNR511F00L在技術方案中應用相關的常見問題與解答

Sure, here are 10 common questions and answers related to the application of UNR511F00L in technical solutions:

  1. What is UNR511F00L?

    • UNR511F00L is a high-power NPN silicon transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of UNR511F00L?

    • The key features of UNR511F00L include high current capability, low saturation voltage, and high transition frequency.

  3. What are the typical applications of UNR511F00L?

    • UNR511F00L is commonly used in audio amplifiers, power management circuits, motor control, and other general-purpose switching applications.

  4. What is the maximum collector current of UNR511F00L?

    • The maximum collector current of UNR511F00L is typically around 5A.

  5. What is the maximum collector-emitter voltage of UNR511F00L?

    • The maximum collector-emitter voltage of UNR511F00L is typically around 50V.

  6. What is the typical gain (hfe) of UNR511F00L?

    • The typical gain (hfe) of UNR511F00L is around 100-300 at a collector current of 1A.

  7. What is the thermal resistance of UNR511F00L?

    • The thermal resistance of UNR511F00L is typically around 62°C/W.

  8. Can UNR511F00L be used in high-frequency applications?

    • Yes, UNR511F00L has a high transition frequency, making it suitable for some high-frequency applications.

  9. Is UNR511F00L suitable for use in automotive electronics?

    • Yes, UNR511F00L is often used in automotive electronic systems due to its high current capability and low saturation voltage.

  10. Where can I find the detailed datasheet for UNR511F00L?

    • The detailed datasheet for UNR511F00L can be found on the manufacturer's website or through authorized distributors.