UNR212100L
Product Overview
Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage: 400V
- Current: 10A
- Power Dissipation: 50W
- Gain (hFE): 25 - 160
- Frequency: 2MHz
Detailed Pin Configuration
- Emitter
- Base
- Collector
Functional Features
- High voltage capability
- Low saturation voltage
- Fast switching speed
- Complementary to UNR212200L
Advantages
- Suitable for high power applications
- Reliable and durable
- Wide range of operating frequencies
Disadvantages
- Higher power dissipation compared to some alternatives
- Sensitive to overvoltage conditions
Working Principles
The UNR212100L operates as a bipolar junction transistor, utilizing the movement of charge carriers within a semiconductor to amplify or switch electronic signals.
Detailed Application Field Plans
- Power supplies
- Audio amplifiers
- Motor control circuits
- Lighting systems
Detailed and Complete Alternative Models
- UNR212200L
- MJE13005
- 2N3055
- TIP31C
This comprehensive entry provides an in-depth understanding of the UNR212100L, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
10個與UNR212100L在技術方案中應用相關的常見問題與解答
What is UNR212100L?
- UNR212100L is a high-power, low-resistance NPN silicon transistor designed for use in various technical solutions.
What are the key features of UNR212100L?
- The key features include high power dissipation, low collector-emitter saturation voltage, and low thermal resistance.
In what technical solutions can UNR212100L be used?
- UNR212100L can be used in applications such as power amplifiers, motor control, switching circuits, and voltage regulators.
What is the maximum power dissipation of UNR212100L?
- The maximum power dissipation is typically around 30 watts.
What is the typical collector-emitter saturation voltage of UNR212100L?
- The typical collector-emitter saturation voltage is around 1.0 volts.
What is the recommended operating temperature range for UNR212100L?
- The recommended operating temperature range is usually between -55°C to 150°C.
Does UNR212100L require any specific heat sinking or thermal management?
- Yes, due to its high power dissipation, UNR212100L may require appropriate heat sinking or thermal management measures.
Can UNR212100L be used in automotive applications?
- Yes, UNR212100L is suitable for use in automotive electronic systems and power control modules.
What are the typical load conditions for UNR212100L in power amplifier applications?
- In power amplifier applications, UNR212100L is often used with load impedances ranging from 4 to 16 ohms.
Are there any specific considerations for circuit design when using UNR212100L?
- It's important to consider proper biasing, current and voltage ratings, and thermal considerations when designing circuits with UNR212100L.