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NSTB1003DXV5T1G

NSTB1003DXV5T1G

Product Overview

  • Category: Semiconductor
  • Use: Power transistor
  • Characteristics: High voltage, high current capability
  • Package: TO-263-3
  • Essence: Power switching and amplification
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 30A
  • Power Dissipation: 125W
  • Operating Temperature: -55°C to 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain

Functional Features

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Advantages

  • Suitable for high power applications
  • Robust and reliable
  • Low conduction losses
  • Enhanced thermal performance

Disadvantages

  • Sensitive to overvoltage spikes
  • Requires careful handling during assembly

Working Principles

The NSTB1003DXV5T1G is a power transistor designed to control high-power circuits. It operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals.

Detailed Application Field Plans

This power transistor is commonly used in various applications such as: - Switching power supplies - Motor control - Inverters - LED lighting - Automotive systems

Detailed and Complete Alternative Models

  • STP30NF10
  • IRF3205
  • FDP8878

Note: The above alternative models are provided for reference and may have different specifications and pin configurations.

This entry provides a comprehensive overview of the NSTB1003DXV5T1G power transistor, including its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

10個與NSTB1003DXV5T1G在技術方案中應用相關的常見問題與解答

  1. What is NSTB1003DXV5T1G?

    • NSTB1003DXV5T1G is a high-speed, low-capacitance diode array designed to protect sensitive electronics from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning-induced surges.

  2. What are the key features of NSTB1003DXV5T1G?

    • The key features of NSTB1003DXV5T1G include low capacitance, high surge capability, low clamping voltage, and compatibility with high-speed data interfaces.

  3. How can NSTB1003DXV5T1G be used in technical solutions?

    • NSTB1003DXV5T1G can be used in technical solutions to protect electronic components such as USB ports, HDMI interfaces, Ethernet ports, and other high-speed data lines from transient voltage events.

  4. What are the typical applications of NSTB1003DXV5T1G?

    • Typical applications of NSTB1003DXV5T1G include smartphones, tablets, laptops, gaming consoles, automotive electronics, industrial control systems, and communication equipment.

  5. What is the maximum surge capability of NSTB1003DXV5T1G?

    • NSTB1003DXV5T1G has a maximum surge capability of 30A per IEC 61000-4-5 (tp=8/20μs).

  6. Is NSTB1003DXV5T1G RoHS compliant?

    • Yes, NSTB1003DXV5T1G is RoHS compliant, making it suitable for use in environmentally friendly electronic products.

  7. What is the operating temperature range of NSTB1003DXV5T1G?

    • NSTB1003DXV5T1G has an operating temperature range of -40°C to 125°C, allowing it to be used in a wide range of environmental conditions.

  8. Does NSTB1003DXV5T1G require external components for proper operation?

    • No, NSTB1003DXV5T1G is a standalone diode array and does not require any external components for proper operation.

  9. Can NSTB1003DXV5T1G be used in high-speed data applications?

    • Yes, NSTB1003DXV5T1G is specifically designed for high-speed data applications and is compatible with interfaces such as USB 3.0, HDMI, Ethernet, and more.

  10. What are the packaging options available for NSTB1003DXV5T1G?

    • NSTB1003DXV5T1G is available in a compact DFN package, making it suitable for space-constrained PCB designs.