MUN5114T1G

Product Overview

Category

The MUN5114T1G belongs to the category of NPN Bipolar Power Transistors.

Use

It is commonly used for amplification and switching of electronic signals in various applications.

Characteristics

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed

Package

The MUN5114T1G is typically available in a SOT-223 package.

Essence

This transistor is essential for power management and control in electronic circuits.

Packaging/Quantity

It is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 2A
• Power Dissipation (PD): 2.25W
• DC Current Gain (hFE): 40 - 320

Detailed Pin Configuration

The MUN5114T1G has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

• High voltage capability allows for use in various power applications.
• Low collector-emitter saturation voltage ensures efficient switching performance.
• Fast switching speed enables quick response in electronic circuits.

Advantages

• Suitable for high voltage applications
• Low power dissipation
• Wide range of DC current gain

Disadvantages

• Limited maximum collector current compared to some alternative models
• Sensitive to temperature variations

Working Principles

The MUN5114T1G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal.

Detailed Application Field Plans

The MUN5114T1G is widely used in: - Power supply circuits - Motor control systems - Audio amplifiers - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the MUN5114T1G include: - MUN5111T1G - MUN5112T1G - MUN5113T1G - MUN5115T1G

In summary, the MUN5114T1G is a versatile NPN Bipolar Power Transistor with high voltage capability, low collector-emitter saturation voltage, and fast switching speed. It is commonly used in power management and control applications, offering advantages such as low power dissipation and a wide range of DC current gain. However, it is important to consider its limitations, such as sensitivity to temperature variations and limited maximum collector current when compared to alternative models.