MUN2111T3G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: NPN bipolar junction transistor, low power dissipation, high current gain
Package: SOT-223
Essence: Small signal amplification
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 40V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 600mA
• Power Dissipation (PD): 2W
• Transition Frequency (fT): 250MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current gain
• Low power dissipation
• Fast switching speed

Advantages and Disadvantages

Advantages: - High current gain allows for small signal amplification - Low power dissipation reduces heat generation - Fast switching speed enables quick response in electronic circuits

Disadvantages: - Limited maximum collector current compared to other transistors - Moderate operating temperature range

Working Principles

The MUN2111T3G operates as a semiconductor device, utilizing the movement of charge carriers within its structure to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, enabling signal amplification or switching.

Detailed Application Field Plans

• Audio amplification circuits
• Signal processing circuits
• Switching circuits in electronic devices

Detailed and Complete Alternative Models

• BC547
• 2N2222
• 2N3904
• PN2222A

This completes the English editing encyclopedia entry structure for MUN2111T3G, providing comprehensive information about the product's category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.