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MMJT350T1G
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MMJT350T1G

Product Overview

Category: Transistor
Use: Power switching applications
Characteristics: High voltage, high speed, low on-resistance
Package: SOT-223
Essence: NPN Silicon Power Transistor
Packaging/Quantity: Tape & Reel (3000 units per reel)

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 3A
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 250mA, 2A
  • Power Dissipation (Max): 2.5W

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low on-resistance

Advantages and Disadvantages

Advantages: - Suitable for power switching applications - High voltage capability - Fast switching speed

Disadvantages: - Limited current handling capacity - Relatively high on-resistance

Working Principles

The MMJT350T1G operates as a power transistor by controlling the flow of current between the collector and emitter terminals based on the base current input.

Detailed Application Field Plans

The MMJT350T1G is commonly used in power supply circuits, motor control, and other power switching applications where high voltage and fast switching speed are required.

Detailed and Complete Alternative Models

  • MMBT350T1G
  • MMFT350T1G
  • MMPT350T1G

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10個與MMJT350T1G在技術方案中應用相關的常見問題與解答

  1. What is the MMJT350T1G?

    • The MMJT350T1G is a high voltage NPN bipolar junction transistor designed for general purpose amplifier and switching applications.

  2. What are the key features of the MMJT350T1G?

    • The MMJT350T1G features a high voltage capability, low leakage current, and high current gain, making it suitable for various technical solutions.

  3. What are the typical applications of the MMJT350T1G?

    • Typical applications include audio amplifiers, power management circuits, motor control, and general switching applications.

  4. What is the maximum voltage and current ratings of the MMJT350T1G?

    • The MMJT350T1G has a maximum collector-emitter voltage of 300V and a continuous collector current of 500mA.

  5. What are the thermal characteristics of the MMJT350T1G?

    • The MMJT350T1G has a thermal resistance from junction to ambient of 357°C/W, allowing for effective heat dissipation in various applications.

  6. Is the MMJT350T1G suitable for high frequency applications?

    • While the MMJT350T1G can operate at moderate frequencies, it is more commonly used in low to moderate frequency applications due to its design.

  7. Can the MMJT350T1G be used in automotive applications?

    • Yes, the MMJT350T1G is suitable for automotive applications such as electronic ignition systems, power window controls, and other automotive electronics.

  8. What are the recommended operating conditions for the MMJT350T1G?

    • The recommended operating temperature range is -55°C to 150°C, and the device should be operated within the specified voltage and current limits.

  9. Are there any specific layout considerations when using the MMJT350T1G?

    • It is important to minimize lead lengths and provide adequate heat sinking to ensure proper performance and reliability in technical solutions.

  10. Where can I find detailed application notes and reference designs for the MMJT350T1G?

    • Detailed application notes and reference designs can be found in the product datasheet, as well as on the manufacturer's website and technical forums.