Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Low power, high voltage, small signal N-channel field-effect transistor
Package: SOT-23
Essence: Small size, low power consumption, high voltage capability
Packaging/Quantity: Tape & Reel, 3000 units per reel
The MMBF170LT1G operates based on the field-effect transistor principle, where the flow of current between the source and drain terminals is controlled by the voltage applied to the gate terminal.
Note: The above information is provided for reference purposes only. Always refer to the official datasheet for accurate specifications and details.
Word count: 298
What is MMBF170LT1G?
What are the key features of MMBF170LT1G?
What are the typical applications of MMBF170LT1G?
What is the maximum drain-source voltage for MMBF170LT1G?
What is the maximum continuous drain current for MMBF170LT1G?
What is the typical input capacitance of MMBF170LT1G?
What is the typical gate-source cutoff voltage for MMBF170LT1G?
What are the recommended operating conditions for MMBF170LT1G?
Can MMBF170LT1G be used in low noise amplifier circuits?
Where can I find detailed technical specifications for MMBF170LT1G?