ON Semiconductor
圖片可能僅供參考。
有關產品詳細信息，請參閱規格。
MJE5850G
詳情 數據表

MJE5850G

Introduction

The MJE5850G is a power transistor belonging to the category of electronic components. It is commonly used in various electronic circuits for amplification and switching applications due to its specific characteristics and performance.

Basic Information Overview

  • Category: Power Transistor
  • Use: Amplification and Switching
  • Characteristics: High voltage, high current capability
  • Package: TO-220
  • Essence: Silicon NPN Epitaxial Planar Transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: [Insert voltage rating]
  • Current Rating: [Insert current rating]
  • Power Dissipation: [Insert power dissipation]
  • Frequency Range: [Insert frequency range]

Detailed Pin Configuration

The MJE5850G typically features three pins: 1. Collector (C): Connects to the positive supply voltage in most applications. 2. Base (B): Controls the transistor's conductivity, acting as the input terminal. 3. Emitter (E): Connected to the ground in most applications.

Functional Features

  • High voltage capability
  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages and Disadvantages

Advantages

  • Suitable for high-power applications
  • Reliable and robust construction
  • Wide operating temperature range

Disadvantages

  • Higher cost compared to standard transistors
  • Requires careful handling due to sensitivity to static electricity

Working Principles

The MJE5850G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The MJE5850G finds extensive use in the following application fields: - Audio amplifiers - Power supplies - Motor control circuits - Voltage regulators

Detailed and Complete Alternative Models

  • MJE5851G
  • MJE5852G
  • MJE5853G

In conclusion, the MJE5850G power transistor offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among design engineers and hobbyists alike.

[Word Count: 298]

10個與MJE5850G在技術方案中應用相關的常見問題與解答

  1. What is MJE5850G?

    • MJE5850G is a high voltage, high speed NPN transistor commonly used in power supply and switching applications.

  2. What are the key specifications of MJE5850G?

    • The MJE5850G has a maximum collector-emitter voltage of 400V, a continuous collector current of 8A, and a transition frequency of 4MHz.

  3. In what types of technical solutions is MJE5850G commonly used?

    • MJE5850G is frequently utilized in power supply circuits, motor control, and general purpose switching applications.

  4. What are the typical operating conditions for MJE5850G?

    • The typical operating conditions for MJE5850G include a collector current of 4A, a collector-emitter voltage of 250V, and an ambient temperature range of -55°C to 150°C.

  5. How does MJE5850G compare to other transistors in its class?

    • MJE5850G offers high voltage and current capabilities with a relatively fast switching speed, making it suitable for various power-related applications.

  6. What are the recommended circuit configurations for using MJE5850G?

    • Common circuit configurations for MJE5850G include emitter follower, common emitter, and switch mode power supply designs.

  7. Are there any specific considerations for driving MJE5850G in a circuit?

    • It's important to ensure proper base drive and heat dissipation for MJE5850G to operate within its specified parameters.

  8. Can MJE5850G be used in audio amplifier applications?

    • While MJE5850G can handle high power levels, it's not typically optimized for audio amplifier applications due to its primary use in power supply and switching circuits.

  9. What are the typical failure modes of MJE5850G?

    • Common failure modes include thermal runaway due to inadequate heat sinking, overvoltage stress leading to breakdown, and excessive current causing device damage.

  10. Where can I find detailed application notes and reference designs for MJE5850G?

    • Detailed application notes and reference designs for MJE5850G can often be found in the manufacturer's datasheets, application guides, and technical resources.