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BD676AS
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BD676AS Product Overview

Introduction

The BD676AS is a semiconductor device belonging to the category of power transistors. This component is widely used in electronic circuits for its specific characteristics and performance.

Basic Information Overview

  • Category: Power Transistor
  • Use: Amplification and switching applications
  • Characteristics: High voltage and current capability, low saturation voltage
  • Package: TO-220AB
  • Essence: NPN silicon epitaxial planar transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Collector-Emitter Voltage (VCEO): 60V
  • Collector Current (IC): 4A
  • Power Dissipation (PD): 40W
  • Transition Frequency (fT): 3MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The BD676AS follows the standard pin configuration for a TO-220AB package: 1. Base (B) 2. Collector (C) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in various power applications
  • Low saturation voltage minimizes power loss during switching operations
  • Fast switching speed enhances circuit efficiency

Advantages and Disadvantages

Advantages

  • High voltage and current ratings
  • Low saturation voltage
  • Wide operating temperature range

Disadvantages

  • Relatively lower transition frequency compared to some alternative models
  • Larger package size compared to SMD alternatives

Working Principles

The BD676AS operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The BD676AS finds extensive use in the following application fields: - Power supply circuits - Audio amplifiers - Motor control systems - Lighting control circuits

Detailed and Complete Alternative Models

Some alternative models to the BD676AS include: - BD675AS - BD677AS - BD678AS - 2N3055 - TIP31C

In conclusion, the BD676AS power transistor offers high voltage and current capabilities, making it suitable for a wide range of amplification and switching applications across various industries.

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10個與BD676AS在技術方案中應用相關的常見問題與解答

  1. What is the BD676AS?

    • The BD676AS is a PNP silicon power transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of the BD676AS?

    • The BD676AS features high current capability, low collector-emitter saturation voltage, and high transition frequency.

  3. What are the typical applications of the BD676AS?

    • Typical applications include audio amplifiers, power supply circuits, and general switching applications.

  4. What is the maximum collector current of the BD676AS?

    • The maximum collector current is 4A.

  5. What is the maximum collector-emitter voltage of the BD676AS?

    • The maximum collector-emitter voltage is 45V.

  6. What is the power dissipation of the BD676AS?

    • The power dissipation is 40W.

  7. What are the recommended operating conditions for the BD676AS?

    • The recommended operating conditions include a collector current of 1A to 4A and a collector-emitter voltage of 5V to 45V.

  8. What are the thermal characteristics of the BD676AS?

    • The thermal resistance from junction to case is 1.67°C/W.

  9. How should the BD676AS be mounted for optimal performance?

    • The BD676AS should be mounted on a heatsink to ensure proper heat dissipation.

  10. Where can I find the detailed datasheet for the BD676AS?

    • The detailed datasheet for the BD676AS can be found on the manufacturer's website or through authorized distributors.