2SD1802S-TL-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capabilities, low power consumption - Package: TO-252-3 (DPAK) - Essence: NPN silicon transistor - Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications: - Collector-Base Voltage (VCBO): 60V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 1.5A - Power Dissipation (PD): 1.25W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor
Functional Features: - High current gain - Low saturation voltage - Fast switching speed
Advantages: - Suitable for high-speed switching applications - Compact DPAK package for efficient heat dissipation - Low power consumption
Disadvantages: - Limited maximum current and voltage ratings compared to some other transistors - Sensitive to temperature variations
Working Principles: The 2SD1802S-TL-E operates based on the principles of amplification and control of current flow through its three terminals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals.
Detailed Application Field Plans: - Audio amplifiers - Switching power supplies - Motor control circuits - LED lighting applications
Detailed and Complete Alternative Models: - 2SD882 - 2N3904 - BC547
This comprehensive entry provides an in-depth understanding of the 2SD1802S-TL-E transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
10個與2SD1802S-TL-E在技術方案中應用相關的常見問題與解答
What is the 2SD1802S-TL-E transistor used for?
- The 2SD1802S-TL-E is a general-purpose NPN transistor commonly used in amplification and switching applications.
What are the key specifications of the 2SD1802S-TL-E?
- The 2SD1802S-TL-E has a maximum collector current of 1.5A, a maximum collector-emitter voltage of 20V, and a maximum power dissipation of 0.9W.
Can the 2SD1802S-TL-E be used for audio amplification?
- Yes, the 2SD1802S-TL-E can be used in low-power audio amplifier circuits due to its moderate power handling capabilities.
Is the 2SD1802S-TL-E suitable for switching applications?
- Yes, the 2SD1802S-TL-E can be used in low-frequency switching applications such as relay drivers and small motor control.
What are the typical operating conditions for the 2SD1802S-TL-E?
- The 2SD1802S-TL-E operates within a temperature range of -55°C to 150°C and is typically used with a base current of 150mA.
Does the 2SD1802S-TL-E require a heat sink?
- For high-power applications or when operating close to its maximum power dissipation, a heat sink may be necessary to ensure proper thermal management.
Can the 2SD1802S-TL-E be used in a Darlington pair configuration?
- Yes, the 2SD1802S-TL-E can be used as the first stage in a Darlington pair to achieve higher current gain and lower saturation voltage.
What are the common failure modes of the 2SD1802S-TL-E?
- Common failure modes include thermal runaway due to inadequate heat dissipation and overvoltage breakdown if operated beyond its maximum ratings.
Are there any recommended alternative transistors to the 2SD1802S-TL-E?
- Alternative transistors with similar characteristics include the 2N3904, BC547, and KSP2222A, but it's important to verify compatibility with the specific circuit requirements.
Where can I find the detailed datasheet for the 2SD1802S-TL-E?
- The detailed datasheet for the 2SD1802S-TL-E can be obtained from the manufacturer's website or authorized distributors.