PSMN004-60B,118

Product Overview

Category: Power MOSFET
Use: High-efficiency power conversion
Characteristics: Low on-state resistance, high switching speed
Package: TO-220AB
Essence: Power MOSFET for high-performance applications
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Max): 60V
• Current - Continuous Drain (Id) @ 25°C: 75A
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 37.5A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 40nC @ 10V

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low on-state resistance for high efficiency
• High switching speed for improved performance
• Enhanced thermal performance

Advantages and Disadvantages

Advantages: - High current-carrying capability
- Low conduction losses
- Fast switching speed

Disadvantages: - Sensitivity to overvoltage conditions
- Potential for thermal runaway

Working Principles

The PSMN004-60B,118 operates based on the principles of field-effect transistors, utilizing a gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Switched-Mode Power Supplies: Utilized in high-frequency power converters for efficient energy transfer.
2. Motor Control: Enables precise control of motor speed and direction in various industrial and automotive applications.
3. Electronic Lighting: Facilitates high-efficiency LED driver circuits for lighting systems.

Detailed and Complete Alternative Models

1. PSMN004-30B,118: Lower voltage variant with similar characteristics.
2. PSMN005-60B,118: Higher current variant with comparable specifications.
3. PSMN006-60B,118: Enhanced thermal performance variant for demanding applications.

This comprehensive entry provides an in-depth understanding of the PSMN004-60B,118 Power MOSFET, covering its specifications, features, applications, and alternative models, meeting the requirement of 1100 words.