PDTA123ETVL
Product Overview
Category
PDTA123ETVL belongs to the category of small signal transistors.
Use
It is commonly used in low-power amplification and switching applications.
Characteristics
- Small form factor
- Low power consumption
- High gain
Package
PDTA123ETVL is available in a SOT416 (SC-75) package.
Essence
The essence of PDTA123ETVL lies in its ability to provide reliable amplification and switching capabilities in a compact form.
Packaging/Quantity
It is typically supplied in reels with a quantity of 3000 units per reel.
Specifications
- Collector-Base Voltage: 50V
- Collector Current: 100mA
- Total Power Dissipation: 200mW
- Transition Frequency: 250MHz
- Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration
PDTA123ETVL has three pins: 1. Emitter 2. Base 3. Collector
Functional Features
- High voltage gain
- Low noise
- Fast switching speed
Advantages
- Compact size
- Low power consumption
- Suitable for low-power applications
Disadvantages
- Limited power handling capability
- Restricted voltage and current ratings
Working Principles
PDTA123ETVL operates based on the principles of bipolar junction transistor (BJT) amplification and switching, utilizing the interaction between minority and majority charge carriers within the semiconductor material.
Detailed Application Field Plans
PDTA123ETVL finds application in various fields including: - Audio amplification circuits - Sensor interface circuits - Signal conditioning circuits
Detailed and Complete Alternative Models
Some alternative models to PDTA123ETVL include: - BC847B - 2N3904 - MMBT3904
In conclusion, PDTA123ETVL is a small signal transistor that offers high gain and low power consumption, making it suitable for a wide range of low-power amplification and switching applications.
Word count: 298
10個與PDTA123ETVL在技術方案中應用相關的常見問題與解答
What is PDTA123ETVL?
- PDTA123ETVL is a high-performance NPN bipolar junction transistor (BJT) designed for use in various technical solutions.
What are the key specifications of PDTA123ETVL?
- The key specifications include a maximum collector current of 100mA, a maximum collector-base voltage of 50V, and a maximum power dissipation of 200mW.
In what types of technical solutions can PDTA123ETVL be used?
- PDTA123ETVL can be used in applications such as amplifiers, switches, and signal processing circuits.
What are the recommended operating conditions for PDTA123ETVL?
- The recommended operating conditions include a collector current of 10mA to 100mA, a collector-emitter voltage of 20V to 50V, and an operating temperature range of -55°C to 150°C.
How does PDTA123ETVL compare to similar transistors in terms of performance?
- PDTA123ETVL offers high current gain, low saturation voltage, and excellent high-frequency performance compared to similar transistors.
Are there any specific application notes or reference designs available for using PDTA123ETVL?
- Yes, there are application notes and reference designs available that provide guidance on incorporating PDTA123ETVL into various technical solutions.
What are the typical circuit configurations for utilizing PDTA123ETVL?
- Common circuit configurations include common emitter amplifiers, switch mode applications, and interface circuits for sensors and actuators.
Can PDTA123ETVL be used in low-power or battery-operated devices?
- Yes, PDTA123ETVL's low power dissipation makes it suitable for use in low-power and battery-operated devices.
Are there any known reliability issues or failure modes associated with PDTA123ETVL?
- PDTA123ETVL is known for its reliability and robustness when operated within its specified limits.
Where can I find additional resources or support for integrating PDTA123ETVL into my technical solution?
- Additional resources and support can be found through the manufacturer's datasheets, application engineers, and online technical forums dedicated to electronic components and design.