BUK9K52-60E,115

Product Overview

Category

The BUK9K52-60E,115 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The BUK9K52-60E,115 is typically available in a TO-220AB package.

Essence

The essence of this product lies in its ability to efficiently control and switch high voltages in electronic circuits.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 75A
• On-Resistance (RDS(on)): 6.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Power Dissipation (PD): 200W

Detailed Pin Configuration

The BUK9K52-60E,115 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability for power applications
• Low on-resistance for reduced power dissipation
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability

Advantages

• Suitable for high-power applications
• Efficient switching characteristics
• Low power dissipation
• Reliable and robust design

Disadvantages

• May require careful handling due to high voltage capabilities
• Thermal management may be required in certain applications

Working Principles

The BUK9K52-60E,115 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The BUK9K52-60E,115 is commonly used in the following applications: - Switch-mode power supplies - Motor control - Inverters - DC-DC converters - Electronic load switches

Detailed and Complete Alternative Models

Some alternative models to the BUK9K52-60E,115 include: - IRF540N - FDP8870 - STP80NF55-06

In conclusion, the BUK9K52-60E,115 power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications, making it a versatile and reliable component in modern electronic designs.

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