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MRF581G

MRF581G Encyclopedia Entry

Product Overview

The MRF581G belongs to the category of high-frequency, high-power transistors. It is commonly used in RF (radio frequency) applications due to its excellent characteristics such as high power gain and efficiency. The transistor comes in a compact package and is designed for use in various RF amplification and transmission systems. Its essence lies in providing reliable and efficient amplification in high-frequency circuits. The MRF581G is typically packaged individually and is available in various quantities to suit different production needs.

Specifications

  • Frequency Range: 400MHz to 1000MHz
  • Power Output: 30W
  • Gain: 13dB
  • Package Type: TO-39
  • Operating Voltage: 12V
  • Operating Temperature: -65°C to +200°C

Detailed Pin Configuration

The MRF581G features a standard three-pin configuration: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High power gain
  • Excellent linearity
  • Low distortion
  • Wide frequency range coverage
  • High efficiency

Advantages and Disadvantages

Advantages

  • Suitable for high-frequency applications
  • Compact package design
  • High power output
  • Reliable performance

Disadvantages

  • Limited operating temperature range
  • Requires careful handling due to its small size

Working Principles

The MRF581G operates based on the principles of bipolar junction transistors (BJTs). When biased and driven with an appropriate RF signal, it amplifies the input signal and delivers a higher power output at the collector terminal.

Detailed Application Field Plans

The MRF581G is widely used in the following applications: - RF amplifiers - RF transmitters - Radar systems - Communication equipment - Test and measurement instruments

Detailed and Complete Alternative Models

Some alternative models to the MRF581G include: - MRF580A - MRF582

In conclusion, the MRF581G is a high-performance RF transistor that offers excellent power gain and efficiency within a wide frequency range. Its compact design and reliable performance make it a preferred choice for various RF amplification and transmission systems.

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