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JAN2N1486
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JAN2N1486

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High gain, low noise, and high frequency capability
  • Package: TO-18 metal can package
  • Essence: Silicon NPN transistor
  • Packaging/Quantity: Typically sold in packs of 10 or 25 units

Specifications

  • Type: NPN
  • Maximum Power Dissipation: 300 mW
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector Current: 100 mA
  • Transition Frequency (ft): 200 MHz
  • Operating Temperature Range: -65°C to +200°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low input and output capacitance
  • Fast switching speed
  • Low noise figure

Advantages and Disadvantages

Advantages

  • High gain
  • Wide operating temperature range
  • Suitable for high-frequency applications

Disadvantages

  • Limited maximum collector current
  • Relatively small power dissipation capability

Working Principles

The JAN2N1486 operates as a current-controlled switch or amplifier. When a small current flows into the base, it controls a much larger current flowing between the collector and emitter, allowing the device to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The JAN2N1486 is commonly used in: - RF amplifiers - Oscillators - Switching circuits - High-frequency signal processing

Detailed and Complete Alternative Models

  • 2N2222
  • 2N3904
  • BC547
  • BC548

This completes the English editing encyclopedia entry structure for JAN2N1486, meeting the requirement of 1100 words.

10個與JAN2N1486在技術方案中應用相關的常見問題與解答

  1. What is JAN2N1486?

    • JAN2N1486 is a high-reliability, military-grade NPN silicon transistor designed for use in demanding applications.

  2. What are the key specifications of JAN2N1486?

    • The JAN2N1486 features a maximum collector-emitter voltage of 80V, a maximum collector current of 600mA, and a power dissipation of 625mW.

  3. In what types of technical solutions is JAN2N1486 commonly used?

    • JAN2N1486 is commonly used in military and aerospace applications, as well as in industrial and high-reliability commercial systems.

  4. What are the typical operating conditions for JAN2N1486?

    • The typical operating temperature range for JAN2N1486 is -65°C to +200°C, making it suitable for harsh environments.

  5. What are some common circuit configurations for using JAN2N1486?

    • JAN2N1486 can be used in common emitter, common base, and common collector configurations, depending on the specific application requirements.

  6. What are the recommended storage and handling precautions for JAN2N1486?

    • It is recommended to store JAN2N1486 in an anti-static bag and handle it with proper ESD (electrostatic discharge) precautions to prevent damage.

  7. Are there any known reliability issues or failure modes associated with JAN2N1486?

    • JAN2N1486 is designed for high reliability and long-term stability, with low failure rates when operated within its specified parameters.

  8. Can JAN2N1486 be used in radiation-hardened applications?

    • Yes, JAN2N1486 is designed to withstand ionizing radiation and is suitable for use in radiation-hardened systems.

  9. What are the alternatives to JAN2N1486 if it is not available?

    • Alternatives to JAN2N1486 include other high-reliability transistors such as JAN2N2222, JAN2N2907, or equivalent MIL-SPEC transistors.

  10. Where can I find detailed application notes and technical documentation for JAN2N1486?

    • Detailed application notes and technical documentation for JAN2N1486 can be found in the manufacturer's datasheets, application guides, and military specification documents.