PF48F2000P0ZBQ0A

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics: Non-volatile, high-speed data access, compact size
• Package: Integrated circuit (IC)
• Essence: Stores and retrieves digital information using electrical signals
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 2,000 Megabits (250 Megabytes)
• Interface: Parallel
• Supply Voltage: 3.3V
• Access Time: 70 nanoseconds
• Erase/Program Cycles: 100,000 cycles
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. WP#/ACC: Write protect/access protection control
10. RY/BY#: Ready/busy status output

Functional Features

• High-speed data transfer
• Low power consumption
• Reliable data retention
• Easy integration into various electronic devices
• Compatibility with standard parallel interfaces

Advantages

• Fast access time allows for quick data retrieval
• Non-volatile memory retains data even when power is disconnected
• Compact size enables space-efficient designs
• High endurance with 100,000 erase/program cycles
• Wide operating temperature range for versatile applications

Disadvantages

• Limited capacity compared to other storage options
• Relatively higher cost per unit of storage
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

PF48F2000P0ZBQ0A is based on the floating gate transistor technology. It utilizes a grid of memory cells, each capable of storing a charge in its floating gate. The presence or absence of charge determines the stored data value (0 or 1). To read data, electrical signals are applied to specific pins, allowing the charge state to be detected. Writing and erasing data involve applying higher voltages to modify the charge level in the floating gate.

Detailed Application Field Plans

• Consumer electronics: Mobile phones, digital cameras, portable media players
• Automotive systems: Infotainment systems, navigation devices, engine control units
• Industrial equipment: Measurement instruments, control systems, robotics
• Networking devices: Routers, switches, network storage devices

Detailed and Complete Alternative Models

• PF48F1000P0YBQ0A: 1,000 Megabits (125 Megabytes), similar specifications
• PF48F4000P0XBQ0A: 4,000 Megabits (500 Megabytes), higher capacity
• PF48F8000P0WBQ0A: 8,000 Megabits (1 Gigabyte), higher capacity and faster access time

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