NAND256W3A0BN6F TR

Product Overview

• Category: Integrated Circuit (IC)
• Use: NAND Flash Memory
• Characteristics:
  • High-density non-volatile storage
  • Fast read and write operations
  • Low power consumption
  • Reliable data retention
• Package: WSON-8 (Wafer-level Chip Scale Package)
• Essence: This product is a NAND flash memory IC that provides high-density storage for various electronic devices.
• Packaging/Quantity: The NAND256W3A0BN6F TR is typically sold in reels containing a specific quantity of ICs.

Specifications

• Memory Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles
• Page Size: 2,048 bytes
• Block Size: 128 pages
• Read/Write Speed: Up to 108 MHz

Pin Configuration

The NAND256W3A0BN6F TR has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. HOLD - Hold input for SPI operation
4. WP - Write protect input for SPI operation
5. SCK - Serial clock input for SPI operation
6. SI - Serial data input for SPI operation
7. SO - Serial data output for SPI operation
8. CE - Chip enable input for SPI operation

Functional Features

• High-speed data transfer using the SPI interface
• Efficient block management with built-in error correction code (ECC)
• Support for multiple erase and program operations
• Automatic page/block erase before programming
• Power-saving features such as deep power-down mode

Advantages

• High-density storage capacity
• Fast read and write operations
• Low power consumption
• Reliable data retention
• Compact package size for space-constrained designs
• Easy integration with SPI interface

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per bit compared to some alternative memory solutions

Working Principles

The NAND256W3A0BN6F TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the charge level on a floating gate. The SPI interface allows for easy communication between the IC and the host device.

Application Field Plans

The NAND256W3A0BN6F TR is widely used in various electronic devices that require high-density non-volatile storage, such as:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality:

1. NAND128W3A0BN6F TR - 128 Megabit (16 Megabyte) capacity
2. NAND512W3A0BN6F TR - 512 Megabit (64 Megabyte) capacity
3. NAND1G0W3A0BN6F TR - 1 Gigabit (128 Megabyte) capacity

These alternative models provide different storage capacities to suit specific application requirements.

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