MT46V32M16P-6T:F TR

Product Overview

Category

MT46V32M16P-6T:F TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

MT46V32M16P-6T:F TR is available in a small form factor package, making it suitable for space-constrained applications. The package type is typically a ball grid array (BGA).

Essence

The essence of MT46V32M16P-6T:F TR lies in its ability to provide reliable and efficient data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

This product is usually packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package can vary, but it is commonly available in multiples of 100 or 1000 units.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (32 Megabits x 16)
• Speed Grade: 6T
• Operating Voltage: 1.5 Volts
• Interface: Parallel
• Clock Frequency: Up to 800 MHz
• Refresh Rate: 8K cycles/32ms

Detailed Pin Configuration

The pin configuration of MT46V32M16P-6T:F TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CK
42. CKE
43. CS#
44. DM0
45. DM1
46. VSS

Functional Features

• High-speed data access and transfer
• Burst mode operation for efficient data retrieval
• Auto-refresh capability to maintain data integrity
• On-die termination (ODT) for improved signal quality
• Programmable burst length and latency settings
• Low power self-refresh mode for reduced power consumption

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data access and transfer rates improve overall system performance.
• Low power consumption helps prolong battery life in mobile devices.
• Compact package size enables integration into space-constrained designs.
• Wide operating temperature range ensures reliable operation in various environments.

Disadvantages

• DDR3 technology may not offer the same performance as newer memory technologies like DDR4 or DDR5.
• Limited capacity compared to higher-end DRAM chips.
• Higher cost per unit compared to lower-capacity memory options.

Working Principles

MT46V32M16P-6T:F TR operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity.

When a read or write operation is initiated, the memory controller sends the appropriate signals to the chip, specifying the desired address and operation. The data is then accessed or written to the specified location within the memory array.

Detailed Application Field Plans

MT46V32M16P-6T:F TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT46V32M16P-6T:F TR include: - MT47H64M16HR-25E:G - K4B2G1646F-BCK0 - IS43TR16128