MT46V16M16P-5B:K TR

Product Overview

Category

The MT46V16M16P-5B:K TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, tablets, and other digital devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation: The MT46V16M16P-5B:K TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 16 megabits (16M), this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT46V16M16P-5B:K TR is available in a small form factor package, allowing for space-efficient integration into electronic devices.
• Reliable performance: This product is known for its stable and reliable operation, ensuring data integrity and system stability.

Packaging/Quantity

The MT46V16M16P-5B:K TR is typically packaged in tape and reel format, which facilitates automated assembly processes. It is commonly available in quantities of thousands or more per reel.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Megabits x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 5B
• Package Type: TSOP (Thin Small Outline Package)
• Temperature Range: Commercial (0°C to +70°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V16M16P-5B:K TR features a total of 54 pins, each serving a specific function. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VSS
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VDD
46. VDD
47. VDD
48. VDD
49. VDD
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS

Functional Features

The MT46V16M16P-5B:K TR offers the following functional features:

• Random Access: The chip allows for random access to any memory location, enabling efficient data retrieval.
• Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
• Auto Refresh: The DRAM chip automatically performs periodic refresh operations to maintain data integrity.
• Self-Refresh: It has a self-refresh mode that reduces power consumption when the device is idle.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data processing.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates space-efficient integration.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Requires periodic refresh operations, which can temporarily interrupt data access.
• Sensitive to electrical noise and may require additional circuitry for proper operation.
• Limited compatibility with certain older systems due to differences in voltage requirements.

Working Principles

The MT46V16M16P-5B:K TR operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the chip. To read or write data, the chip applies appropriate voltages to the specific memory cells, allowing for data retrieval or modification.

During operation, the chip requires periodic refresh cycles to maintain the charge in the capacitors. This refresh process ensures that the stored data remains intact and prevents data loss