MT46H16M16LFBF-6 IT:A TR

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics:
  • High-speed operation
  • Large storage capacity
  • Compact size
• Package: Integrated circuit (IC) package
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Single unit

Specifications

• Model: MT46H16M16LFBF-6 IT:A TR
• Type: Synchronous DRAM (SDRAM)
• Capacity: 1 Gigabit (Gb)
• Organization: 16 Megabytes (MB) x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 2.5 volts (V)
• Interface: Double Data Rate (DDR)
• Pin Count: 60 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46H16M16LFBF-6 IT:A TR memory module has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VSS
20. NC
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CK
43. CKE
44. CS#
45. DM0
46. DM1
47. VSS
48. VDD
49. VREF
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data transfer rate
• Low power consumption
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for maintaining data integrity
• On-die termination (ODT) for improved signal quality

Advantages and Disadvantages

Advantages: - Fast data transfer speed enhances overall system performance. - Large storage capacity allows for storing a significant amount of data. - Compact size enables integration into space-constrained electronic devices.

Disadvantages: - Relatively higher power consumption compared to non-volatile memory technologies. - Volatile nature requires constant power supply to retain stored data.

Working Principles

The MT46H16M16LFBF-6 IT:A TR operates based on the principles of dynamic random access memory (DRAM). It stores digital information in capacitors within its memory cells, which are organized in a matrix. To read or write data, the module applies voltage to specific rows and columns, allowing charge to flow in or out of the capacitors. The state of each capacitor represents a binary value (0 or 1), enabling the storage and retrieval of digital information.

Detailed Application Field Plans

The MT46H16M16LFBF-6 IT:A TR memory module finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers 4. Workstations 5. Networking equipment 6. Gaming consoles 7. Mobile devices (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

1. MT46H16M16LFBF-6 IT:A
2. MT46H16M16LFBF-6 IT:B
3. MT46H16M16LFBF-6 IT:C
4. MT46H16M16LFBF-6 IT:D
5. MT46H16M16LFBF-6 IT:E

These alternative models offer similar specifications and functionality to the MT46H16M16LFBF-6 IT:A TR memory module, providing options for different requirements and compatibility with various systems.

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