MT41K512M8RH-125 AIT:E TR

Product Overview

Category: Memory Module
Use: This product is a high-speed, low-power DDR3 SDRAM memory module.
Characteristics: It offers fast data transfer rates, low power consumption, and high reliability.
Package: The MT41K512M8RH-125 AIT:E TR comes in a small form factor package.
Essence: It provides efficient and reliable memory storage for various electronic devices.
Packaging/Quantity: The product is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabits (64 Megabytes)
• Speed: 125 MHz
• Organization: 8 banks x 8 bits
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 78 pins

Detailed Pin Configuration

The MT41K512M8RH-125 AIT:E TR has a total of 78 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. BA0
21. BA1
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. VSS
29. A6
30. A7
31. A8
32. A9
33. A10
34. A11
35. A12
36. A13
37. VSS
38. A14
39. A15
40. A16
41. A17
42. A18
43. A19
44. A20
45. A21
46. VSS
47. A22
48. A23
49. A24
50. A25
51. A26
52. A27
53. A28
54. A29
55. VSS
56. A30
57. A31
58. DQS0
59. DQS1
60. DM0
61. DM1
62. VSS
63. CK0
64. CK1
65. CKE0
66. CKE1
67. CS0#
68. CS1#
69. WE#
70. CAS#
71. RAS#
72. VSS
73. RESET#
74. VDD
75. VDDQ
76. VREFCA
77. VREFDQ
78. VSS

Functional Features

• High-speed data transfer rates for improved system performance.
• Low power consumption for energy efficiency.
• Reliable operation with error correction capabilities.
• Wide operating temperature range for versatility in various environments.
• Small form factor package for space-saving designs.

Advantages and Disadvantages

Advantages: - Fast data transfer rates enhance overall system performance. - Low power consumption helps conserve energy. - Error correction capabilities ensure reliable operation. - Wide operating temperature range allows for use in different conditions. - Small form factor package enables compact device designs.

Disadvantages: - Limited capacity compared to higher-density memory modules. - May not be compatible with all devices due to specific pin configuration and voltage requirements.

Working Principles

The MT41K512M8RH-125 AIT:E TR operates based on the DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are organized into banks and accessed through address lines. The memory module communicates with the system controller using various control signals, such as clock signals, chip select signals, and command signals. Data is transferred in parallel across multiple data lines, allowing for high-speed data transfer rates.

Detailed Application Field Plans

The MT41K512M8RH-125 AIT:E TR is commonly used in the following application fields:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers
4. Networking Equipment
5. Embedded Systems
6. Consumer Electronics
7. Industrial Automation

Detailed and Complete Alternative Models

1. MT41K256M16TW-107 IT:P - 256 Megabit DDR3 S