MT29F2G08ABBEAH4-IT:E

Product Overview

Category

MT29F2G08ABBEAH4-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABBEAH4-IT:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

MT29F2G08ABBEAH4-IT:E is available in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F2G08ABBEAH4-IT:E
• Memory Type: NAND Flash
• Storage Capacity: 2 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

The pin configuration of MT29F2G08ABBEAH4-IT:E is as follows:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE# (Chip Enable)
4. RE# (Read Enable)
5. WE# (Write Enable)
6. R/B# (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. NC (No Connection)
10. DQ0-DQ7 (Data Input/Output)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• Page Read/Program/Erase Operations: MT29F2G08ABBEAH4-IT:E supports efficient read, program, and erase operations at the page level.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to detect and correct errors, ensuring data integrity.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across the memory cells, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures consistent operation over time.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance: Like all NAND flash memories, MT29F2G08ABBEAH4-IT:E has a finite number of program/erase cycles before it may become unreliable.
• Cost: NAND flash memory tends to be more expensive compared to other types of non-volatile memory.

Working Principles

MT29F2G08ABBEAH4-IT:E operates based on the principles of NAND flash memory technology. It stores data by trapping electric charges within floating-gate transistors. These charges represent binary information (0s and 1s). The presence or absence of charges determines the stored data.

During read operations, the memory controller applies appropriate voltages to the selected memory cells and measures the resulting current flow. This allows it to determine the stored data.

During program and erase operations, specific voltages are applied to modify the charge levels within the floating gates, effectively programming or erasing the memory cells.

Detailed Application Field Plans

MT29F2G08ABBEAH4-IT:E finds applications in various electronic devices that require non-volatile data storage. Some of the common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, offering fast boot times and data access.

Detailed and Complete Alternative Models

1. MT29F2G08ABBEAH4-ITE
2. MT29F2G08ABBEAH4-ITD
3. MT29F2G08ABBEAH4-ITC
4. MT29F2G08ABBEAH4-