M28W640FCB70ZB6F TR

Product Overview

Category

M28W640FCB70ZB6F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M28W640FCB70ZB6F TR retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient operation.
• Low power consumption: It is designed to consume minimal power during both active and standby modes.

Package

The M28W640FCB70ZB6F TR comes in a compact surface-mount package, making it suitable for integration into small-sized electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, providing a crucial component for the functioning of electronic devices.

Packaging/Quantity

The M28W640FCB70ZB6F TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Flash
• Memory Size: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-48

Detailed Pin Configuration

The M28W640FCB70ZB6F TR features a TSOP-48 package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. /CE#
26. /OE#
27. /WE#
28. VCC
29. VSS
30. DQ0
31. DQ1
32. DQ2
33. DQ3
34. DQ4
35. DQ5
36. DQ6
37. DQ7
38. /RP#
39. /BYTE#
40. /ACC#
41. /WP#
42. /RESET#
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Erase and Program Operations: The M28W640FCB70ZB6F TR supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Write Protection: The device includes write protection features to prevent accidental modification or erasure of stored data.
• High-Speed Read Access: It offers fast read access time, enabling quick retrieval of data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Low power consumption prolongs battery life in portable devices.
• Compact package size facilitates integration into various electronic devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively slower write speed compared to volatile memory technologies.

Working Principles

The M28W640FCB70ZB6F TR utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information and can be read, erased, or programmed using specific electrical signals.

During read operations, the device applies appropriate voltages to access specific memory cells and retrieve stored data. Erase and program operations involve applying higher voltages to modify the charge levels within the floating gates, effectively erasing or programming the memory cells.

Detailed Application Field Plans

The M28W640FCB70ZB6F TR finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the M28W640FCB70ZB6F TR include: - M29W640GL70N6E - S29GL064N90TFI040 - AT45DB641E-SHN2