M28W160CB90N6

Product Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Manufacturer: XYZ Corporation
• Memory Type: NOR Flash
• Capacity: 16 Megabits (2 Megabytes)
• Voltage: 3.3V
• Access Time: 90 nanoseconds
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 erase/write cycles

Detailed Pin Configuration

The M28W160CB90N6 chip has the following pin configuration:

1. VCC (Power supply)
2. A0-A18 (Address inputs)
3. DQ0-DQ15 (Data inputs/outputs)
4. WE# (Write enable)
5. CE# (Chip enable)
6. OE# (Output enable)
7. RP#/BYTE# (Reset/Byte enable)
8. RY/BY# (Ready/Busy)
9. WP#/ACC (Write protect/Acceleration)
10. VSS (Ground)

Functional Features

• Fast Read and Write Operations: The M28W160CB90N6 offers high-speed data access, allowing for quick read and write operations.
• Reliable Data Storage: With its non-volatile nature, the chip ensures data retention even when power is disconnected.
• Low Power Consumption: The memory chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Wide Operating Temperature Range: The M28W160CB90N6 can operate in extreme temperature conditions, making it versatile for various applications.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access times - Low power consumption - Reliable data retention - Wide operating temperature range

Disadvantages: - Limited endurance (100,000 erase/write cycles) - Parallel interface may limit compatibility with newer systems

Working Principles

The M28W160CB90N6 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically erased and reprogrammed. When reading data, the chip applies voltage to specific memory cells and detects the resulting current flow to determine the stored information.

Detailed Application Field Plans

The M28W160CB90N6 is widely used in various electronic devices that require non-volatile data storage, such as: - Embedded systems - Consumer electronics - Automotive applications - Industrial control systems

Detailed and Complete Alternative Models

1. M28W160CT90N6: Similar specifications but with extended temperature range (-40°C to +105°C).
2. M28W160CB70N6: Lower access time (70 nanoseconds) but slightly reduced endurance (50,000 erase/write cycles).
3. M28W160CB80N6: Lower voltage requirement (2.7V to 3.6V) but higher access time (120 nanoseconds).

These alternative models offer flexibility based on specific application requirements while maintaining similar functionality to the M28W160CB90N6.

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