JS28F640J3F75B TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns
• Erase/Program Cycles: 100,000 cycles

Pin Configuration

The JS28F640J3F75B TR flash memory module has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Reliable data retention even without power
• Built-in error correction codes (ECC) for data integrity
• Low power consumption
• Easy integration into various electronic devices

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Wide operating temperature range - High endurance with 100,000 erase/program cycles

Disadvantages: - Higher cost compared to other memory technologies - Limited write endurance compared to some newer memory types

Working Principles

The JS28F640J3F75B TR flash memory utilizes a floating gate transistor structure to store data. It uses electrical charges trapped in the floating gate to represent binary information (0s and 1s). The presence or absence of charge determines the stored data. When reading, the charge is sensed and converted back into digital data. During programming, an electric field is applied to move charges into or out of the floating gate, altering the stored data.

Detailed Application Field Plans

The JS28F640J3F75B TR flash memory is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems

Its high capacity, fast access times, and reliability make it suitable for applications that require non-volatile storage with quick data retrieval.

Alternative Models

1. JS28F640J3D75B TR
2. JS28F640J3C75B TR
3. JS28F640J3A75B TR

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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