JS28F256P33BFE

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns (Max)
• Erase/Program Suspend/Erase Suspend Time: 20 µs (Typ)
• Package Dimensions: 14mm x 18mm

Pin Configuration

The JS28F256P33BFE has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. RY/BY#
46. WP#
47. RESET#
48. VSS

Functional Features

• High-speed read and write operations for efficient data access
• Reliable and durable non-volatile memory for long-term data storage
• Large storage capacity to accommodate a wide range of applications
• Erase and program suspend functionality for enhanced flexibility during operations
• Low power consumption for energy-efficient performance

Advantages and Disadvantages

Advantages: - Fast read and write operations - Large storage capacity - Reliable and durable - Low power consumption

Disadvantages: - Limited compatibility with certain devices due to the parallel interface - Higher cost compared to some other flash memory options

Working Principles

The JS28F256P33BFE operates based on the NOR flash memory technology. It utilizes a parallel interface to communicate with the host device. The memory cells store data using a floating gate transistor structure, allowing for non-volatile storage. The device can be accessed for both reading and writing operations, providing reliable and efficient data storage.

Detailed Application Field Plans

The JS28F256P33BFE is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Embedded Systems: Used in embedded systems such as industrial control systems, automotive electronics, and medical devices for storing firmware, configuration data, and log files.
2. Consumer Electronics: Found in consumer electronics like digital cameras, set-top boxes, and gaming consoles for storing operating systems, user data, and multimedia content.
3. Networking Equipment: Utilized in routers, switches, and network storage devices for firmware storage and configuration data.
4. Telecommunications: Used in telecommunication equipment like base stations and modems for storing software, configuration files, and call logs.

Detailed and Complete Alternative Models

1. JS28F256P33BFE-TA: Similar specifications and features as JS28F256P33BFE, but with extended temperature range (-40°C to +105°C).
2. JS28F256P33BFE-TR: Tape and reel packaging option for automated assembly processes.
3. JS28F256P33BFE-WH: Wide voltage range variant (1.65V to 3.6V) for specific applications.

These alternative models provide similar functionality and compatibility options based on specific requirements.

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