AT24C01-10PI-2.7

Product Overview

Category

AT24C01-10PI-2.7 belongs to the category of electrically erasable programmable read-only memory (EEPROM) integrated circuits.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The AT24C01-10PI-2.7 can be erased and reprogrammed electrically, eliminating the need for physical removal.
• Non-volatile: The stored data remains intact even when power is removed.
• Low power consumption: This EEPROM consumes minimal power during read and write operations.
• High reliability: The AT24C01-10PI-2.7 offers excellent data retention and endurance characteristics.
• Small form factor: The compact package allows for easy integration into different electronic systems.

Package

The AT24C01-10PI-2.7 is available in a 8-pin DIP (Dual Inline Package) format.

Essence

The essence of the AT24C01-10PI-2.7 lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory capacity: 1 kilobit (128 bytes)
• Operating voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write cycle endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The AT24C01-10PI-2.7 features the following pin configuration:

1. A0: Address input bit 0
2. A1: Address input bit 1
3. A2: Address input bit 2
4. GND: Ground
5. SDA: Serial data input/output
6. SCL: Serial clock input
7. WP: Write protect
8. VCC: Power supply

Functional Features

• Random access: The AT24C01-10PI-2.7 allows for random read and write operations, enabling efficient data manipulation.
• I2C interface: This EEPROM utilizes the I2C (Inter-Integrated Circuit) protocol for communication with the host device.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental modification.
• Page write mode: The AT24C01-10PI-2.7 supports page write operations, allowing multiple bytes to be written in a single operation.

Advantages and Disadvantages

Advantages

• Compact size and low power consumption make it suitable for various electronic applications.
• High reliability ensures data integrity over extended periods.
• Easy integration due to standard I2C interface.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to some alternative models.

Working Principles

The AT24C01-10PI-2.7 operates by utilizing an array of floating-gate transistors to store digital information. When writing data, an electric charge is applied to the floating gate, altering its electrical characteristics. Reading data involves sensing the voltage levels on the floating gates to determine the stored information.

Detailed Application Field Plans

The AT24C01-10PI-2.7 finds applications in various fields, including: 1. Microcontroller-based systems requiring non-volatile memory storage. 2. Industrial automation for storing configuration parameters. 3. Consumer electronics, such as smart TVs and set-top boxes, for storing user preferences. 4. Automotive electronics for data logging and configuration storage.

Detailed and Complete Alternative Models

Some alternative models to the AT24C01-10PI-2.7 include: 1. AT24C02: 2 kilobit EEPROM with similar characteristics but double the memory capacity. 2. AT24C04: 4 kilobit EEPROM offering increased storage capacity. 3. AT24C08: 8 kilobit EEPROM suitable for applications requiring larger memory sizes. 4. AT24C16: 16 kilobit EEPROM with extended storage capabilities.

In conclusion, the AT24C01-10PI-2.7 is a compact and reliable EEPROM integrated circuit commonly used for non-volatile data storage in various electronic devices. Its small form factor, low power consumption, and high reliability make it an ideal choice for many applications. However, its limited storage capacity and slower write speeds should be considered when selecting an appropriate memory solution.