MX25L25635FMJ-10G

Product Overview

Category

The MX25L25635FMJ-10G belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic devices such as computers, smartphones, and other consumer electronics.

Characteristics

• Non-volatile: The MX25L25635FMJ-10G retains stored data even when power is removed.
• High capacity: It has a storage capacity of 256 megabits (32 megabytes).
• Fast access time: The device offers quick read and write operations.
• Low power consumption: It operates efficiently with minimal power requirements.

Package

The MX25L25635FMJ-10G is available in a small form factor package, making it suitable for compact electronic devices.

Essence

This product serves as a reliable and high-capacity storage solution for various electronic applications.

Packaging/Quantity

The MX25L25635FMJ-10G is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The MX25L25635FMJ-10G features a standard pin configuration for SPI flash memory devices:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer: The MX25L25635FMJ-10G supports fast read and write operations, enabling efficient data access.
• Sector erase capability: It allows for selective erasure of specific memory sectors, enhancing flexibility in data management.
• Write protection: The device includes a write protect pin (/WP) to prevent accidental modification or deletion of stored data.
• Low power consumption: The MX25L25635FMJ-10G is designed to minimize power usage, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Compact form factor
• Low power consumption

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other memory technologies

Working Principles

The MX25L25635FMJ-10G utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). When reading data, the trapped charges are measured to determine the stored values. During writing or erasing, high voltages are applied to modify the charge levels, allowing for data updates or erasure of specific memory sectors.

Detailed Application Field Plans

The MX25L25635FMJ-10G finds applications in various electronic devices and systems, including: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MX25L12835FMJ-10G: A similar flash memory device with half the storage capacity (128 megabits).
2. MX25L51235FMJ-10G: A higher-capacity alternative with double the storage capacity (512 megabits).
3. MX25L06435FMJ-10G: A lower-capacity option with 64 megabits of storage.

These alternative models offer different storage capacities to cater to specific application requirements.

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