IXYS
圖片可能僅供參考。
有關產品詳細信息，請參閱規格。
IXFN72N55Q2
詳情 數據表

IXFN72N55Q2

Product Overview

Category

The IXFN72N55Q2 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IXFN72N55Q2 is typically available in a TO-268 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with a standard quantity per reel.

Specifications

  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 72A
  • RDS(ON) Max: 4.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 160nC

Detailed Pin Configuration

The IXFN72N55Q2 has a standard pin configuration with the gate, drain, and source pins clearly labeled.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid response in control systems.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability in certain regions

Working Principles

The IXFN72N55Q2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFN72N55Q2 is well-suited for a wide range of applications including: - Motor control in industrial equipment - Power supply units for consumer electronics - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN72N55Q2 include: - IXFN80N50Q2 - IRF3205 - FDP8878

In conclusion, the IXFN72N55Q2 power MOSFET offers high performance and reliability for power management applications, making it a valuable component in various electronic systems.

Word Count: 323

10個與IXFN72N55Q2在技術方案中應用相關的常見問題與解答

  1. What is the maximum drain-source voltage of IXFN72N55Q2?

    • The maximum drain-source voltage of IXFN72N55Q2 is 550V.

  2. What is the continuous drain current rating of IXFN72N55Q2?

    • The continuous drain current rating of IXFN72N55Q2 is 72A.

  3. What is the on-state resistance (RDS(on)) of IXFN72N55Q2?

    • The on-state resistance (RDS(on)) of IXFN72N55Q2 is typically 9.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IXFN72N55Q2?

    • The gate threshold voltage of IXFN72N55Q2 is typically 2.0V.

  5. Can IXFN72N55Q2 be used in high-power switching applications?

    • Yes, IXFN72N55Q2 is suitable for high-power switching applications due to its high drain-source voltage and current ratings.

  6. What type of package does IXFN72N55Q2 come in?

    • IXFN72N55Q2 comes in a TO-268 package, also known as D3PAK or DPak.

  7. Is IXFN72N55Q2 suitable for motor control applications?

    • Yes, IXFN72N55Q2 can be used in motor control applications due to its high current handling capability.

  8. What are the typical thermal characteristics of IXFN72N55Q2?

    • The thermal resistance from junction to case (RθJC) of IXFN72N55Q2 is typically 0.5°C/W.

  9. Can IXFN72N55Q2 be used in automotive power systems?

    • Yes, IXFN72N55Q2 is suitable for automotive power systems due to its high voltage and current ratings.

  10. What are the recommended operating conditions for IXFN72N55Q2?

    • The recommended operating temperature range for IXFN72N55Q2 is -55°C to 175°C, and the recommended gate-source voltage is typically ±20V.